Polierter Wafer
PAM-XIAMEN can offer polished wafer, n type or p type with orientation at <100>, <110> or <111>. FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)
- Beschreibung
Produktbeschreibung
Polierte Waffel
PAM-XIAMEN can offer polished wafer, n type or p type with orientation at <100>, <110> or <111>. More Specifications, please see tables below.
Unsere Vorteile auf einen Blick
- Advanced epitaxy growth equipment and test equipment.
- Offer the highest quality with low defect density and good surface roughness.
- Strong research team support and technology support for our customers
1. Specifications of Polished Silicon Wafers
1.1 FZ Polished Wafers Specifications
FZ polished silicon wafer: mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)
Typ | Leitungsart | Orientierung | Durchmesser Umfang (mm) | Widerstandsbereich (Ω cm) | Geometrische Parameter Körnigkeit, Oberflächenmetall |
FZ | N & P. | <100> & <111> | 76.2-200 | >1000 | T≥260 (um) TTV ≤ 2 (um) TIR ≤ 2 (um) STIR ≤ 1 (um) (20 * 20) Graininess≤10pcs(≥0.3um) , ≤20pcs(≥ urface metal≤5E10/cm2 BSD:Etchpit density>1E106pcs/cm2 Poly:5000-12000 A |
NTDFZ | N | <100> & <111> | 76.2-200 | 30-800 | |
CFZ | N & P. | <100> & <111> | 76.2-200 | 1-50 | |
GDFZ | N & P. | <100> & <111> | 76.2-200 | 0.001-300 |
1.2 CZ Polished Wafers Specifications
Typ | Leitungsart | Orientierung | Durchmesser Umfang (mm) | Widerstandsbereich (Ω cm) | Geometrische Parameter Körnigkeit, Oberflächenmetall |
MCZ | N & P. | <100> <110> & <111> | 76.2-200 | 1-300 | T≥260 (um) TTV ≤ 2 (um) TIR ≤ 2 (um) STIR ≤ 1 (um) (20 * 20) Graininess≤10pcs(≥0.3um) ,≤20pcs(≥0.2um) Surface metal≤5E10/cm2 BSD:Etchpit density>1E106pcs/cm2LTO:3500~8000±250A |
CZ | N & P. | <100> <110> & <111> | 76.2-200 | 1-300 | |
MCZ stark dotiert | N & P. | <100> & <111> | 76.2-200 | 0.001-1 |
2. About Polished Wafer
High-purity electronic grade polysilicon undergoes the steps of crystal pulling, slicing, beveling, lapping, etching, polishing, and cleaning to produce a polished wafer, which meets electrical, surface physical properties, impurity standards and other specifications. Wafers with special processes such as annealing, epitaxy, and SOI are processed based on polished wafers.
Polished wafer (PW) is a silicon chip with atomic flatness that is single side or double sides polished silicon wafer, accounting for about 70% of silicon wafer applications. After the monocrystalline silicon ingot is produced, it is cut into thin slices from the cylindrical monocrystalline silicon of the ingot, which is a wafer of high-purity silicon element. The purpose of polishing is to further remove the residual damage layer on the processed surface. The polished monocrystalline silicon wafer can be directly used to fabricate devices or as an epitaxial substrate material. Polished Si wafer is widely used in digital and analog integrated circuits, memory, power devices and other chips.
N Type Sb Doped Silicon Wafer for Integrated Circuit Manufacturing
PAM XIAMEN offers MCZ silicon ingot and silicon wafer.
PAM XIAMEN bietet schwarze Lithium-Niobat-Wafer für Optiken und SAW-Komponenten an
Stöchiometrisches LPCVD-Nitrid auf Siliziumwafern
4″ Prime CZ Si-Wafer mit einseitig gesputterter Cr/Au-Schichtdicke 10/50 nm
Si-Wafer-Durchmesser ohne Beugung 32 mm für XRD-Messungen
Siliziumnitrid-Wellenleiter - Substrate und bereitgestellte Dienstleistungen
Super Low Stress Nitron auf Siliziumwafern
Nitrid-Siliziumwafer mit geringer Spannung
Siliziumwafer mit (211) -Orientierung
Eigenschaften des Siliziumwafers
Siliziumwafer für die weiche Lithographie
Silicon Fluidic PDMS Micro-Fluidic Chip-Plattformen
Ultra-Verdünnte Silizium-Wafer
Kundenspezifische Siliziumwafer
Dicke des Siliziumwafers: 275 + - 25 um
Dicke des Siliziumwafers: 1000 μm
2 "Siliziumwafer Dicke: 1000 ± 25 μm
Dicke des Si-Wafers: 675 ± 25 um
4 "Si-Wafer Dicke: 500 ± 20 μm
3 "Si-Wafer Dicke: 380 ± 20 μm
50,8 mm (2 Zoll) Siliziumwafer-1
50,8 mm (2 Zoll) Siliziumwafer-2
50,8 mm (2 Zoll) Siliziumwafer-3
50,8 mm (2 Zoll) Siliziumwafer-4
50,8 mm (2 Zoll) Siliziumwafer-5
76,2 mm (3 Zoll) Siliziumwafer
100 mm (4 Zoll) Siliziumwafer-1
100 mm (4 Zoll) Siliziumwafer-2
100 mm (4 Zoll) Siliziumwafer-3
100 mm (4 Zoll) Siliziumwafer-4
100 mm (4 Zoll) Siliziumwafer-5
100 mm (4 Zoll) Siliziumwafer-6
150 mm (6 Inch) Silizium-Wafer
(100) Orientierte Siliziumwafer-1
(100) Orientierte Siliziumwafer-2
(100) Orientierte Siliziumwafer-3
(100) Orientierte Siliziumwafer-4
(100) Orientierte Siliziumwafer-5
(112) Orientierungssiliciumwafer
4″ FZ Intrinsic Silicon Wafer SSP