PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches | Cust class | Dopant | Type | Orientation | PFL length | PFL direction | SFL | Off orientation | Resistivity | Diameter | Thickness | Bow | TTV | Warp |
8 | DSP | Phosphorus | N | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 1.0° | 1 – 5 Ohmcm | 200 ± 0.5 mm | 650 ± 5 µm | 20 | 3 | 35 | |
8 | DSP | Phosphorus | N | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 0.5° | 0.7 – 5.0 Ohmcm | 200 ± 0.2 mm | 500 ± 10 µm | 3,5 | 50 | ||
8 | DSP | Phosphorus | N | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 0.20° | 1 – 50 Ohmcm | 200 ± 0.2 mm | 725 ± 20 | 30 | 0,9 | 30 | |
8 | DSP | Red Phos. | N+ | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 1.0 ° | 0.001 – 0.002 Ohmcm | 200 ± 0.2 mm | 725 ± 25 µm | 50 | 1 | 50 | |
8 | DSP | Red Phos. | N+ | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 0.2° | 0.010 – 0.020 Ohmcm | 200 ± 0.2mm | 500 ± 10 µm | 20 | 2 | 30 | |
8 | DSP | Red Phos. | N+ | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 1.0 ° | 0.001 – 0.002 Ohmcm | 200 ± 0.2 mm | 725 ± 25 µm | ||||
8 | DSP | Red Phos. | N+ | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 0.5° | < 0.0015 Ohmcm | 200 ± 0.2 mm | 725 ± 15 µm | 60 | 3 | 60 | |
8 | SSP | Boron | P | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 1.0 ° | 1 – 50 Ohmcm | 200 ± 0.2 mm | 725 ± 25 µm | 35 | 6 | 35 | |
8 | SSP | Antimony | N+ | 100 | 0,0 ± 0,0 | 110 ± 1 | -1.0-1.0° | 0.007-0.02 Ohmcm | 199.8-200.2mm | 710-740 µm | 40 | 5 | 60 | |
8 | SSP | Antimony | N+ | 100 | 0,0 ± 0,0 | 110 ± 1 | -1.0-1.0° | 0.007-0.02 Ohmcm | 199.8-200.2mm | 710-740 µm | 40 | 5 | 60 | |
8 | SSP | Antimony | N+ | 100 | 0,0 ± 0,0 | 110 ± 1 | -1.0-1.0° | 0.007-0.02 Ohmcm | 199.8-200.2mm | 710-740 µm | 40 | 5 | 60 | |
8 | SSP | Antimony | N+ | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 0.5 ° | 0.008 – 0.020 Ohmcm | 200 ± 0.2 mm | 725 ± 15 µm | 8 | 32 | ||
8 | SSP | Antimony | N+ | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 0.5° | 0.005 – 0.020 Ohmcm | 200 ± 0.2 mm | 725 ± 10 µm | 60 | 10 | 60 | |
8 | SSP | Antimony | N+ | 100 | 0,0 ± 0,0 | 011 ± 1 | 0.0 ± 0.6° | 0.005 – 0.020 Ohmcm | 200 ± 0.2 mm | 725 ± 15 µm | 25 | 4 | 30 | |
8 | SSP | Antimony | N+ | 100 | 0,0 ± 0,0 | 110 ± 1 | -1.0-1.0° | 0.007-0.02 Ohmcm | 199.8-200.2mm | 710-740 µm | 40 | 5 | 60 | |
8 | SSP | Antimony | N+ | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 0.5 ° | 0.008 – 0.020 Ohmcm | 200 ± 0.2 mm | 725 ± 15 µm | 8 | 32 | ||
8 | SSP | Antimony | N+ | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 0.5° | 0.01 – 0.02 Ohmcm | 200 ± 0.2 mm | 500 ± 5 µm | 4 | 50 | ||
8 | SSP | Antimony | N+ | 100 | 0,0 ± 0,0 | 110 ± 1 | -1.0-1.0° | 0.007-0.02 Ohmcm | 199.8-200.2 mm | 710-740 µm | 40 | 5 | 60 | |
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 110 ± 0,50 | 0.0 ± 0.5° | 0.003-0.006 Ohmcm | 200 ± 0.2 mm | 675 ± 15 µm | 50 | 4 | 50 | |
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 100 ± 1 | 0.0 ± 0.5° | 0.002-0.003 Ohmcm | 200 ± 0.2 mm | 725 ± 15 µm | 80 | 4 | 100 | |
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 100 ± 1 | 0.0 ± 1.0 ° | 0.001 – 0.003 Ohmcm | 200 ± 0.2 mm | 725 ± 15 µm | 3 | 100 | ||
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 100 ± 1 | 0.0 ± 0.5° | 0.002-0.003 Ohmcm | 200 ± 0.2 mm | 725 ± 15 µm | 80 | 4 | 100 | |
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 010 ± 1 | 0.0 ± 0.4° | < 3 mOhmcm | 200 ± 0.2 mm | 725 ± 15 µm | 6 | 60 | ||
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 010 ± 1 | 0.0 ± 0.4° | < 3 mOhmcm | 200 ± 0.2 mm | 725 ± 15 µm | 6 | 60 | ||
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 1.0 ° | 1 – 4 mOhmcm | 200 ± 0.2 mm | 725 ± 15 µm | 80 | 10 | 80 | |
8 | SSP | Arsenic | N+ | 111 | 0,0 ± 0,0 | 110 ± 1 | 3 ± 0.5 ° | 1 – 4 mOhmcm | 200 ± 0.2 mm | 725 ± 15 µm | 80 | 10 | 80 | |
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 100 ± 1 | 0.0 ± 1° | 0.0022-0.003 Ohmcm | 200 ± 0.2 mm | 725 ± 15 µm | 25 | 3 | 45 | |
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 011 ± 1 | 0.0 ± 1.0° | 2.0 ± 1.0 mOhmcm | 200 ± 0.2 mm | 725 ± 15 µm | 65 | 8 | 100 | |
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 1.0 ° | 1 – 4 mOhmcm | 200 ± 0.2 mm | 725 ± 15 µm | 80 | 10 | 80 | |
8 | SSP | Arsenic | N+ | 111 | 0,0 ± 0,0 | 110 ± 1 | 3 ± 0.5 ° | 1 – 4 mOhmcm | 200 ± 0.2 mm | 725 ± 15 µm | 80 | 10 | 80 | |
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 0.5 ° | 0.005 – 0.007 Ohmcm | 200 ± 0.2 mm | 725 ± 20 µm | 4 | 40 | ||
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 011 ± 1 | 0.0 ± 1.0° | 2.0 ± 1.0 mOhmcm | 200 ± 0.2 mm | 725 ± 15 µm | 65 | 8 | 100 | |
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 100 ± 1 | -1.0 – 1.0° | 0.0015-0.003 Ohmcm | 200.0±0.5 mm | 710-740 µm | 60 | 6 | 100 | |
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 0.5 ° | 0.005 – 0.007 Ohmcm | 200 ± 0.2 mm | 725 ± 20 µm | 4 | 40 | ||
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 100 ± 1 | 0.0 ± 1° | 0.0015-0.003 Ohmcm | 200.0±0.5 mm | 725 ± 15 | 40 | 6 | 40 | |
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 1.0 ° | 1 – 4 mOhmcm | 200 ± 0.2 mm | 725 ± 15 µm | 80 | 10 | 80 | |
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 1.0 ° | 1 – 3.5 mOhmcm | 200 ± 0.2 mm | 725 ± 15 µm | 32 | 10 | 32 | |
8 | SSP | Arsenic | N+ | 111 | 0,0 ± 0,0 | 110 ± 1 | 3 ± 0.5 ° | 1 – 4 mOhmcm | 200 ± 0.2 mm | 725 ± 15 µm | 80 | 10 | 80 | |
8 | SSP | Arsenic | N+ | 111 | 0,0 ± 0,0 | 110 ± 1 | 3 ± 0.5° | 1 – 3 mOhmcm | 200 ± 0.2 mm | 725 ± 15 µm | 80 | 10 | 80 | |
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 100 ± 1 | 0 ± 0.5° | 0.002-0.003 Ohmcm | 200 ± 0.2 mm | 725 ± 15 µm | 80 | 4 | 100 | |
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 010 ± 1 | 0.0 ± 0.4° | 2.0- 3.0 mOhmcm | 200 ± 0.2 mm | 725 ± 15 µm | 6 | 60 | ||
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 011 ± 1 | 0.0 ± 1.0° | 2.0 ± 1.0 mOhmcm | 200 ± 0.2 mm | 725 ± 15 µm | 65 | 8 | 100 | |
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 100 ± 1 | 0.0 ± 1° | 0.0022-0.003 Ohmcm | 200 ± 0.2 mm | 725 ± 15 µm | 25 | 3 | 45 | |
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 0.33° | 0.001 – 0.003 Ohmcm | 200 ± 0.2 mm | 725 ± 15 µm | 3 | 100 | ||
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 100 ± 1 | 0.0 ± 1.0° | 0.0015-0.003 Ohmcm | 200.0±0.5 mm | 725 ± 15 µm | 60 | 6 | 100 | |
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 010 ± 1 | 0.0 ± 0.4° | 0.002 – 0.003 Ohmcm | 200 ± 0.1 mm | 725 ± 15 µm | 6 | 60 | ||
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 010 ± 1 | 0.0 ± 0.4° | 0.002 – 0.003 Ohmcm | 200 ± 0.1 mm | 725 ± 15 µm | 6 | 60 | ||
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 100 ± 1 | 0.0 ± 1.0 ° | 0.001-0.003 Ohmcm | 200.0 ± 0.2 mm | 725 ± 15 µm | 3 | 100 | ||
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 100 ± 1 | 0.0 ± 0.5° | 0.002-0.003 Ohmcm | 200 ± 0.2 mm | 725 ± 15 µm | 40 | 4 | 50 | |
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 100 ± 1 | 0.0 ± 0.5° | 0.002-0.003 Ohmcm | 200 ± 0.2 mm | 725 ± 15 µm | 40 | 4 | 50 | |
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 010 ± 1 | 0.0 ± 0.4° | 0.002 – 0.003 Ohmcm | 200 ± 0.1 mm | 725 ± 15 µm | 6 | 60 | ||
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 100 ± 1 | 0.0 ± 0.5° | 0.002-0.003 Ohmcm | 200 ± 0.2 mm | 725 ± 15 µm | 4 | 50 | ||
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 010 ± 1 | 0.0 ± 1.0° | < 0.003 Ohmcm | 200 ± 0.2 mm | 725 ± 15 µm | 4 | 60 | ||
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 100 ± 1 | 0.0 ± 0.5° | 0.002-0.003 Ohmcm | 200 ± 0.2 mm | 725 ± 15 µm | 40 | 4 | 50 | |
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 011 ± 1 | 0.0 ± 1.0° | 2.0 ± 1.0 mOhmcm | 200 ± 0.2 mm | 725 ± 15 µm | 65 | 8 | 100 | |
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 0.2 ° | 0.001 – 0.005 Ohmcm | 200 ± 0.2 mm | 712.5 ± 12.5 µm | 60 | 8 | 75 | |
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 100 ± 1 | 0.1 ± 0.4° | 0.002-0.003 Ohmcm | 200 ± 0.2 mm | 725 ± 15 µm | 40 | 4 | 50 | |
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 100 ± 1 | 0.0 ± 0.5° | 0.002-0.003 Ohmcm | 200 ± 0.2 mm | 725 ± 15 µm | ||||
8 | SSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 0TT ± 1 | 0.0 ± 1.0° | <= 0.0035 Ohmcm | 200 ± 0.2 mm | 685 ± 5 µm | 30 | 3 | 30 |
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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
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