PAM XIAMEN offers ZnTe single crystal substrate.
ZnTe single crystal substrate, undoped, N type, (110) 10x10x 0.5mm, 2sp
ZnTe Random orientation , n type, 10x10x0.5 mm, 2sp
ZnTe single crystal substrate, undoped, P-type (100) 10x10x1.0mm, single side with scratch/dig 60/40
ZnTe, N type, (110) [...]
2019-05-21meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
3″
1500
P/E
5-7
SEMI Prime
n-type Si:P
[100]
3″
350
P/P
1-5
SEMI Prime
n-type Si:P
[100]
3″
350
P/P
1-25
SEMI Prime, TTV<1μm, Empak cst
n-type Si:P
[100] ±1°
3″
500
P/P
1-100
SEMI Prime, TTV<2μm, Empak cst
n-type Si:P
[100-4°] ±0.5°
3″
500
P/E
1-20
Prime
n-type Si:P
[100]
3″
650
P/P
1-10
Prime, TTV<2μm
n-type Si:P
[100]
3″
1000
P/P
1-5
SEMI Prime, hard cst
n-type Si:P
[100]
3″
1000
P/E
1-20
SEMI Prime
n-type Si:P
[100]
3″
6000
P/E
1-20
SEMI Prime, Individual cst
n-type Si:Sb
[100]
3″
300
P/E
0.02-0.04
SEMI Prime, in hard cassettes of 2 wafers
n-type Si:Sb
[100]
3″
381
P/E
0.008-0.020
SEMI Prime
n-type Si:As
[100]
3″
380
P/EOx
0.001-0.005
SEMI Prime, LTO Back-side seal [...]
2019-03-06meta-author
Extended defects and precipitates in LT-GaAs, LT-InAlAs and LT-InP
We review the main structural characteristics of low temperature molecular beam epitaxially produced GaAs (LT-GaAs), LT-InAlAs, and LT-InP. These materials exhibit almost identical behaviours with respect to growth and annealing conditions. For too low growth temperatures [...]
Deep level defects in p-type GaAs1−x Bi x (x < 1%) and GaAs grown by molecular beam epitaxy at substrate temperatures of 330 °C and 370 °C have been characterized by deep level transient spectroscopy. We find that incorporating Bi into GaAs at 330 [...]
2019-11-25meta-author
PAM XIAMEN offers 60+1mm FZ Si Ingot -5
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at [email protected] and [email protected]
2020-04-16meta-author
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaAsP materials and other related products and services announced the new availability of 2″-3” size is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.Dr. Shaka, said, “We are pleased to offer GaAsP wafers to our [...]
2017-06-15meta-author