PAM-XIAMEN offers diamond on silicon wafer. Since diamond has a wide band gap, diamond thin films on silicon wafer, which is diamond epitaxial growth on silicon by MPCVD, is applied to wide band gap semiconductors, such as gas sensor devices, temperature sensor devices, radiation/infrared detection devices, etc. For more info about the diamond wafers, please refer to the specifications listed below:
1. Si-based Diamond Wafer PAM210428-DOS
on Si ,2”size
|Surface roughness||After growth, surface roughness ~Ra 10nm;|
|Wrap||Did not test it|
Did not test it
|Coefficient of thermal expansion||1.3 (10-6K-1)|
|Thermal conductivity||1000 ± 200 W/m.K|
2. Diamond Wafer List
Diamond on Oxide (DOI) Wafer, 4″, 2 um Thick, 10 nm Ra
Diamond Deposition on Silicon Wafer, 4″, 2 um Thick, 10 nm Ra
Electric Conductive Diamond on Insulator Wafer, 4″ , 2 um Thick, 10 nm Ra
Conductive Diamond Film on Insulator, 5×5 mm , 2 um Thick,
Diamond on Oxide Wafer, 10x10mm, 2um Thick, 10nm Ra
Diamond on Silicon Wafer, 10x10mm , 2 um Thick, 10 nm Ra
Nanocrystalline Diamond on Silicon Wafer, 5x5mm , 2 um Thick, 10 nm Ra
Electric Conductive Diamond on Insulator Wafer, 10×10 , 2 um Thick, 10 nm Ra
Diamond on Silicon Wafer, 10X10X0.5 mm, Film:1 um Thick, 1nm Ra
Diamond on Silicon Wafer, 4″ , 1 um Thick, 1nm Ra
Diamond Coating on Silicon Wafer, 5x5X0.5 mm, Film:1 um Thick, 1nm Ra
3. Diamond on Silicon Wafer Preparation Method
How to make a polycrystalline diamond on silicon wafer? Here come tow methods: high temperature and high pressure method (HPHT) and microwave plasma chemical vapor deposition (MPCVD).
The HPHT method requires a metal catalyst to synthesize diamond, and its atoms will inevitably penetrate into the diamond crystal and exist in the form of impurities, which will affect its purity. At present, the maximum size of large-grain diamond single crystal wafers grown by the high temperature and high pressure method has reached more than 10mm, and there is still a certain distance from the demand for semiconductor epitaxy in size.
However, the high-quality diamond single crystal grown by the MPCVD method can be completely colorless and transparent, with almost no impurities. At present, the maximum size of CVD diamond has reached 12.5mm, and the mosaic stitched diamond has reached more than 25mm. For the CVD, there are problems, such as poor crystal quality, polycrystalline area of splicing joints and etc.
The size of the MPCVD diamond single crystal is only limited by the size of the single crystal substrate (seed crystal). It is still quite difficult to expand the size of CVD diamond through lateral growth technology. Therefore, splicing and growing multiple single crystal seeds into “mosaic” large single crystals has become an important direction for large-size diamond on silicon wafers for semiconductors. However, The “mosaic” diamond splicing technology in the industry uses the CVD method to grow diamonds on HPHT single crystals, which uses CVD diamond slices to splice.