Q:Do you sell SiC wafers that are not (0001) plane? For example, (11-20)?
A:We can offer a-plane, but the size would be smaller,and should require quantity, do you have size requirement?
Q:Dislocation density < 1E8 of GaN on sapphire from what kind of characterization? A:Considering edge dislocation and mixing dislocation and then abtained by XRD
Q:Can you supply 4″ AlGaAs epi wafers for IR LEDs? A:Yes, we can offer 850nm or 620nm for 4” size.
Q:Our application will be making micro-pillar arrays based on the MQWs for high brightness LEDs and its wavelength tuning. So we do not really care the emission wavelength you provide but we will mind whether the process and emission wavelength would be consist between [...]
Q:We want to know the refractive index of these SiC wafers? A:The refractive index is no=2.707, ne=2.755
Q: What wafer size do you provide with flat sapphire substrate? A:Currently we still can offer 2″ wafer on flat sapphire substrate.
The InGaAsP material epitaxially grown on the InP substrate is an important material for the fabrication of optoelectronic and microwave devices. The emission wavelength of InGaAsP / InP laser structure covers 1.0-1.7μm, covering two low-loss windows of 1.3μm and 1.55μm for silica fiber communication. [...]
