Q : does the price include fabrication of p and n metal contacts? If not, can you fabricate p and n contacts plus SiO2 passivation based on my design? This can turn to a bigger project.
A:Sorry, we can not offer fabrication of p and n metal contacts, also we can not fabricate p and n contacts plus SiO2 passivation.
Q:Dislocation density < 1E8 of GaN on sapphire from what kind of characterization? A:Considering edge dislocation and mixing dislocation and then abtained by XRD
Q: The epitaxial wafer on pss substrate is attractive to me, so I want to know the overall efficiency it can deliver. Could you please tell me an efficiency number (lm/w or cd/A or EQE) of the device based on a structure similar to [...]
Q: Could you please provide information about standard epi structure of InGaAsP/InP wafer? A: Here we only can offer you general structure: Layer Material 6 InP 5 GaInAs 4 GaInAsP 3 InP 2 AlGaInAs MQW PL 1500-1560nm 1 InP buffer InP substrate
Q: Could you please advise guaranteed EPD for below substrate and epi? Gallium Arsenide wafers, P/E 2″Ø×380±25µm, LEC SI undoped GaAs:-[100]±0.5°, n-type Ro=(0.8E8-0.9E8)Ohmcm, One-side-polished, back-side matte etched, 2 Flats, LT-GaAs EPI: 1-2µm, Resistivity >1E7 Ohm-cm, Carrier lifetime <1ps, Sealed under nitrogen in single wafer cassette. A: Dislocation Density<1×10^6cm-2
Q:For Si-doped GaN, what are the resistivity and mobility? A:Mobility:150-200Resistivity<0.05ohm.cm,
Q: Regarding your red LED epiwafers, what about the top layer or cap layer on the epiwafer structure? A: As before we have p+GaAs(several nanometers only) in the top layer, however these two years, due to technology innovation, and all foundry remove this layer [...]
