PAM-XIAMEN Offers AlGaInAs epitaxial wafer for Laser diode
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of Laser diode epitaxial structure and other related products and services announced the new availability of size 3” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN‘s product line.
Dr. Shaka, said, “We are pleased to offer Laser diode epitaxial structure to our customers including many who are developing better and more reliable for DPSS laser. Our Laser diode epitaxial structure has excellent properties, tailored doping profile for low absorpton losses and highpower single mode operation, optimized active region for 100% internal quantum efficiency, special broad waveguide (BWG) design for high power operation and/or low emission divergence for effective fiber coupling. The availability improve boule growth and wafering processes.” and “Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our Laser diode epitaxial structure are natural by products of our ongoing efforts, currently we are devoted to continuously develop more reliable products.”
PAM-XIAMEN’s improved Laser diode epitaxial structure product line has benefited from strong tech, support from Native University and Laboratory Center.
Now it shows an example as follows:
About Xiamen Powerway Advanced Material Co., Ltd
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
About Laser diode epitaxial structure
The laser diode epitaxial structure is grown using one of the crystal growth techniques, usually starting from an N doped substrate, and growing the I doped active layer, followed by the P doped cladding, and a contact layer. The active layer most often consists of quantum wells, which provide lower threshold current and higher efficiency.
C: Thank you for your message and information.
It is very interesting for us.
1.Laser diode 3 inch epitaxial structure for 808nm Qty: 10 nos.
Could you send us layers thickness and doping information for 808nm.
1.Generic 3” Laser epitaxial structure for 808nm emission
I.GaAs Quantum well PL wavelength: 799 +/-5 nm
We need peak emission PL : 794+/-3 nm, could you manufacture it?
II.PL wavelength uniformity: <=5nm
III. Defect density : <50 cm -2
IV. Doping level uniformity : <=20%
V. Doping level tolerance: <= 30%
VI. Mole fraction (x) tolerance: +/-0.03
VII.Epilayer thickness uniformity: <=6%
VIII.Thickness tolerance :+/-10%
IX.N+ GaAs substrate
X.Substrate EPD< 1 e3 cm -2
XI.Substrate carrier c : 0.5-4.0X e18 cm-2
XII.Major flat orientation : (01-1) ± 0.05º
We need also you proposal for 980 and 1550nm epi-wafers.as noted below (at your web-site) InGaAsP/InGaAs on InP substrates
We provide InGaAsP/InGaAs epi on InP substrates as follows:
1.Structure: 1.55um InGaAsP QW laser
|0||InP Substrate||S-doped, 2E18/cm-3|
|1||n-InP buffer||1.0um, 2E18/cm-3|
|7||InP space layer||20nm,undoped|
|9||InP||1200 nm, 1.5E18|
|10||InGaAs||100 nm, 2E19|
Could you inform also about LD parameters of LDs manufactured for your standard pi-wafers?
What is P output power of LD in CW with single emitter with emitting area width =90-100um,
for example or Pout for LD bar with emitting area width =10mm?
Looking forward for your fast reply to the above questions.
P: see below please:
C: We are interested in epi-wafer with lasing wavelength 808 nm.
Kindly please send us evaluation samples for evaluation purposes and adjustment
of the technological process because our application is DPSS laser and we must
get in 808 +\-3 nm after LD assembling.
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For more information, please visit our website: http://www.powerwaywafer.com,