DyScO3/GdScO3//TbScO3 crystal

PAM XIAMEN offers DyScO3/GdScO3//TbScO3 crystal.

Crystal  Structure /Lattice Constant(A) MP oC Density, g/cm3 Growth Tech
 DyScO3  Orthorombic   a=5.44  b=5.71  c=7.89  2127  6.9  CZ
 GdScO3  Orthorombic  a=5.45  b=5.75  c=7.93  2127  6.6  CZ
TbScO3 Orthorhombic, a = 5.4543, b = 5.7233  c = 7.9147 2127  6.6 CZ

DyScO3
DyScO3 (110) 5x5x0.5mm 1sp
DyScO3 (110) 5x5x0.5mm 2sp
DyScO3 (110) 10x10x0.5mm 1sp
DyScO3 (110) 10x10x0.5mm 2sp
DyScO3 (001) 10x10x0.5mm 1sp
DyScO3 (001) 10x10x0.5mm 2sp
DyScO3 (001) 5x5x0.5mm 1sp

GdScO3
GdScO3 (110) 5x5x0.5mm 1sp
GdScO3 (110) 5x5x0.5mm 2sp
GdScO3 (110) 10x10x0.5mm 2sp
GdScO3 (110) 10x10x0.5mm 1sp
GdScO3 (001) 10x10x0.5mm 1sp

TbScO3
TbScO3 (110) 10x10x0.5mm 1sp”
TbScO3 (110) 5x5x0.5mm 1sp
TbScO3 (110) 5x5x0.5mm 2sp

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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