Effect of Mn on the low temperature growth of GaAs and GaMnAs

Effect of Mn on the low temperature growth of GaAs and GaMnAs

With the combined use of reflection high energy electron diffraction (RHEED) and scanning tunneling microscope, the growing surfaces of GaAs and GaMnAs were investigated. At the start of GaAs growth at low temperature ∼250°C, RHEED oscillation indicated larger growth rate, which decreased gradually to reach the constant value, identical to that for the high temperature growth. The shift in the growth rate depends on excess As coverage pre-adsorbed on the substrate. Mn addition lowered the degree of the shift and improved the epitaxy.

Source: Physica E: Low-dimensional Systems and Nanostructures

If you need more information about Effect of Mn on the low temperature growth of GaAs and GaMnAs，please visit our website:https://www.powerwaywafer.com, send us email at [email protected] or [email protected].

2014-03-28 low temperature growth of GaAs

Graphite & Graphene Substrate-3

PAM XIAMEN offers Multilayer Graphene on Nickel foil: 2″”x2″” and Pyrolytic Graphite Substrate & Foam. Isomolded Graphite Plate, Fine Ground, 0.125″T x 4″W x 4″L for Fuel Cell Pyrolytic Graphite Substrate, C axis Textured, 10x10X0.5 mm, One Side Polished Pyrolytic Graphite Substrate, C axis Textures, 1″W x [...]

2019-05-06meta-author

Homoepitaxial growth of GaN crystals by Na-flux dipping method

The realization of low-dislocation-density bulk GaN crystals is necessary for use in the fabrication of future high-power devices with low power consumption. In this study, we attempted the regrowth of low-dislocation-density (104–105 cm−2) GaN substrates to fabricate thick and low-dislocation-density GaN crystals using the dipping [...]

2019-11-18meta-author

SINGLE CRYSTALS, WAFERS AND CRYSTAL SUBSTRATES-2

PAM XIAMEN offers Single Crystals, Wafers and Crystal Substrates. PAM XIAMEN provides both standard and customized high quality single crystals, wafers and substrates for a wide range of applications such as LED, ferroelectric, piezoelectric, electro-optical, photonics, high power electronics, and high frequency power devices, just to name [...]

2019-03-12meta-author

Photographic Film

PAM XIAMEN offers Photographic Film. Various Technical ParametersMax plotted area 24″*35″Thickness 0.18mmResolution 6000dpi、1200dpi、1600dpi、2500dpiPositioning accuracy ±10μmRepetitive accuracy ±3μmMin Critical Dimension 25μm at 6000 and 12000dpi 12μm at 16000 and 25000dpiCD Tolerance Control ±3μm or ±4μm Main application areas: LCD, PCB, VFD, BGA, FPC and other industries For more information, please visit our website: https://www.powerwaywafer.com, send us email [...]

2019-07-04meta-author

(11-22) Plane U-GaN Freestanding GaN Substrate

(11-22) Plane U-GaN Freestanding GaN Substrate PAM-XIAMEN offers (11-22) Plane U-GaN Freestanding GaN SubstrateItem PAM-FS-GAN(11-22)- UDimension 380+/-50umThickness 350 ±25 µm 430 ±25 µmOrientation (10-11) plane off angle toward A-axis 0 ±0.5° (10-11) plane off angle toward C-axis -1 ±0.2°Conduction Type N-typeResistivity (300K) < 0.1 Ω·cmTTV ≤ 10 µmBOW BOW ≤ 10 µmSurface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished.Dislocation Density ≤ 5 x 10 6cm-2Macro Defect Density 0 cm-2Useable Area > 90% (edge exclusion)Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at [email protected] and [email protected]

2020-08-20meta-author

Au (highly oriented polycrystalline)/Ti/SiO2/Si substrate

PAM XIAMEN offers Au (highly oriented polycrystalline)/Ti/SiO2/Si substrate: PAM-191005-SI/SIO2/TI/AU: Au( highly oriented polycrystalline)/Ti/ SiO2 on Silicon substrate ,4″x0.525 mm,1sp P-type B-doped, Au(111)=50 nm, Ti=2 nm ,SiO2=300nm Specifications Au/Ti/SiO2/Si substrate: 1.Structure: Au/Ti/ SiO2 on Si substrate Flim thickness: Au(111)=50 nm Ti=2 nm SiO2=300 nm 2.Substrate spec: Material:Si substrate Size: 4″ dia. Orientation:(100) Type:P type Dopant:B doped Thickness:525 um Grade: [...]

2019-04-26meta-author

Read More
Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More
Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More
Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More
Photo Mask

PAM-XIAMEN Offers Photomasks
A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More
CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More
Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More
Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More
Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More
Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More
Photo Mask

PAM-XIAMEN Offers Photomasks
A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More
CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More
Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

Effect of Mn on the low temperature growth of GaAs and GaMnAs

Effect of Mn on the low temperature growth of GaAs and GaMnAs

Share this post

Related Posts

Graphite & Graphene Substrate-3

Homoepitaxial growth of GaN crystals by Na-flux dipping method

SINGLE CRYSTALS, WAFERS AND CRYSTAL SUBSTRATES-2

Photographic Film

(11-22) Plane U-GaN Freestanding GaN Substrate

Au (highly oriented polycrystalline)/Ti/SiO2/Si substrate

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers