•AlGaN/GaN HEMT on SiC substrate is presented to improve the electrical operation.
•The depletion region of structure is amended using a multiple recessed gate.
•A gate structure is proposed to be able to control the thickness of the channel.
•RF parameters are considered and are improved.
In this [...]
Growth and analysis of modulation-doped AlGaN/GaN heterostructure on semi-insulating SiC substrate
The growth of modulation-doped AlGaN/GaN heterostructure on semi-insulating SiC substrate.
The investigation of the effect of HT-AlN thickness on crystalline quality and stress of GaN on SiC.
The semi-insulating characteristic of GaN layer analyzed by PL [...]
Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocation
•High-quality InSb was grown on GaAs by MBE using a “buffer-free” method.
•The strain energy is relieved by interfacial misfit dislocations observed by TEM.
•The type and separation of dislocations are [...]
Epitaxial GaN template grown on Al2O3 (sapphire) substrate and customizable stacks are available with high quality and low defect density. Attached are a list of several types of GaN thin film on sapphire substrate wafers with different thicknesses, carrier types, and capping layers that [...]
PAM XIAMEN offers 3″ Silicon Wafer.
SEMI Prime, Primary Flat @ ±0.5°, Secondary @  109.5° CW from Primary, in Epak cassettes of 6, 7 & 7 wafers
SEMI Prime, Primary @ , Secondary @  109.5±2° CW from Primary, hard cst
GaAs pn diodes with heavily carbon-doped p-type GaAs grown by MOMBE were fabricated. The I-V and C-V characteristics were not significantly affected by the hole concentration of the p-GaAs although a lattice mismatch at the junction generates misfit dislocations. A good I-V characteristic with [...]