PAM-XIAMEN offers (20-21) Plane N-GaN Freestanding GaN Substrate:
Item
PAM-FS-GAN(20-21)-N
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°
(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Si Doped
Resistivity (300K)
< 0.05 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at [email protected] and [email protected]
2020-08-20meta-author
PAM XIAMEN offers Indium Foil.
Indium ( In ) Foil: 100 mm (W) x 100 mm ( L) x 0.1 mm ( T)
Polycrystal In Foil
Purity: > 99.995%
Size: 0.10 mm thickness x 100mm width x 100 mm Length
Surface finish: as cold rolling [...]
2019-05-08meta-author
Highlights
•AlGaN/GaN HEMT on SiC substrate is presented to improve the electrical operation.
•The depletion region of structure is amended using a multiple recessed gate.
•A gate structure is proposed to be able to control the thickness of the channel.
•RF parameters are considered and are improved.
In this [...]
PAM XIAMEN offers 60+1mm FZ Si Ingot -1
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at [email protected] and [email protected]
2020-03-10meta-author
In Q4 Discount prices for Universities and Research Institutes
We are pleased to inform that PAM-XIAMEN announces the introduction of special Q4 discount prices for universities and research institutes for small size GaN C-plane with n-type and semi-insulating wafers, which are currently on the company’s [...]
2012-10-18meta-author
PAM XIAMEN offers (111) Silicon Wafers.
If you don’t see what you need then please email us your specs.
Diam
(mm)
Material
Dopant
Orient.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
6″
n-type Si:P
[111] ±0.5°
300 ±15
P/P
FZ >6,000
SEMI Prime, 1Flat (57.5mm), Lifetime>1,000μs, Empak cst
7″
n-type Si:P
[111] ±0.5°
300 ±15
P/P
FZ >6,000
SEMI Prime, 1Flat (57.5mm), Lifetime>1,000μs, Empak cst
8″
Intrinsic Si:-
[111] ±0.5°
750
E/E
FZ >10,000
SEMI notch, TEST (defects, [...]
2019-02-22meta-author