PAM XIAMEN offers 4″ silicon ignot.
Silicon ingot, per SEMI,
G 100.7±0.3mmØ,
p-type Si:B[100]±2.0°,
Ro=(0.001-0.003)Ohmcm,
Ground Ingot, NO Flats,
NOTE: visual rings of dopant on front and back side ARE NOT allowed
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [...]
2019-07-02meta-author
GaN Wafer
Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, provide GaN wafer serie:
GaN substrate wafer
GaN on sapphire
GaN on silicon HEMT wafer
AlN/GaN on sapphire
AlGaN/GaN on sapphire
Here is relative information of GaN wafer:
GaN wafer price/GaN wafer cost:
But [...]
The uncooled infrared (IR) focal plane detector is one detector that can work at room temperature without a refrigeration device, and has many advantages such as fast startup, low power consumption, small size, light weight, long life, and low cost. And the technology of [...]
2022-04-06meta-author
PAM XIAMEN offers 50.8mm Si wafers.
Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2121
p-type Si:B
[110]
2″
380
P/P
FZ 130–160
1 F @ <111> only
PAM2122
p-type Si:B
[110]
2″
280
P/E
FZ 120–300
1 F @ <111> only
PAM2123
p-type Si:B
[100]
2″
300
P/P
FZ 400–1,000
Prime, NO Flats, hard cst
PAM2124
p-type Si:B
[100]
2″
300
P/E
FZ >50
SEMI Prime, 2Flats, hard cst
PAM2125
p-type Si:B
[111]
2″
300
P/E
FZ 730–1,050
SEMI Prime, [...]
2019-02-18meta-author
PAM XIAMEN offers Mo – Molybdenum Substrates (polycrystalline).
General Properties for Molybdenum
Symbol Mo
Atomic Number 42
Atomic Weight: 95.96 g/mol
Crystal structure: BCC
Lattice constant at room temperature : 0.315 nm
Density: 10.28 g/cm3
Melting Point: 2623 °C
Boiling Point: 4639 °C
Mo Polycrystalline Substrate: [...]
2019-05-08meta-author
InGaN/GaN/AlGaN-based laser diodes grown on free-standing GaN substrates
The InGaN multi-quantum-well (MQW)-structure laser diode (LD) was grown on an epitaxially laterally overgrown GaN on sapphire. The lowest threshold current densities between 1.2 and 2.8 kA cm−2 were obtained when the number of InGaN well layer was [...]