Indium antimonide (InSb) thin film magnetoresistor, which is the core sensitive element of magnetoresistance (MR) sensor, is provided from PAM-XIAMEN with characteristics of non-contact measurement, small size, high reliability, high signal-to-noise ratio and wide frequency response (0-100kHz). InSb magnetoresistance is a new type of [...]
2021-09-14meta-author
A 6-inch MicroLink Devices high-efficiency, lightweight and flexible ELO IMM solar cell wafer. Credit: MicroLink Devices
The U.S. Department of Energy’s (DOE) National Renewable Energy Laboratory (NREL) has entered into a license agreement with MicroLink Devices, Inc. (Niles, IL) to commercialize NREL’s patented inverted metamorphic [...]
2017-11-16meta-author
PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade.
Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]
2019-05-20meta-author
According to data published by WSTSabout worldwide semiconductor market, all product categories and regions are forecasted to grow steadily but moderately in the next two years, under the assumption of a further macro economy recovery throughout the entire forecast period and maturing historically strong [...]
2016-03-15meta-author
The epitaxy optimization studies of high-quality n-type AlInN alloys with different indium contents grown on two types of substrates by metalorganic vapor phase epitaxy (MOVPE) were carried out. The effect of growth pressure and V/III molar ratio on growth rate, indium content, and surface [...]
PAM XIAMEN offers 60+1mm FZ Si Ingot -1
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at [email protected] and [email protected]
2020-03-10meta-author