PAM XIAMEN offers 4″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
100
P
Boron
CZ
-100
1-20
43768
P/P
PRIME
100
P
Boron
CZ
-100
1-20
40-60
P/P
PRIME
100
P
Boron
CZ
-100
1-20
80-100
P/P
PRIME
100
P
Boron
CZ
-100
1-20
180-200
P/P
PRIME
100
P
Boron
CZ
-100
1-20
300-350
P/E
PRIME
100
P
Boron
CZ
-100
1-20
300-350
P/P
PRIME
100
P
Boron
CZ
-100
1-20
350-400
P/P
PRIME
100
P
Boron
CZ
-100
1-20
375-425
P/E
PRIME
100
P
Boron
CZ
-100
.001-.005
450-500
P/P
PRIME
100
P
Boron
CZ
-100
.005-.02
450-500
P/P
PRIME
100
P
Boron
FZ
-100
>3000
450-500
P/P
PRIME
100
P
Boron
CZ
-100
1-20
450-500
P/P
PRIME
100
P
Boron
CZ
-100
.001-.005
500-550
P/E
PRIME
100
P
Boron
CZ
-100
.005-.02
500-550
P/E
PRIME
100
P
Boron
FZ
-100
>3000
500-550
P/E
PRIME
100
P
Boron
CZ
-100
1-20
500-550
P/E
PRIME
100
P
Boron
CZ
-100
1-20
500-550
P/E/DTOx
PRIME
100
P
Boron
CZ
-100
1-20
500-550
P/E/Ni
PRIME
100
P
Boron
CZ
-100
1-20
500-550
P/E/WTOx
100
P
Boron
CZ
-100
1-20
950-1050
P/E
PRIME
100
P
Boron
CZ
-100
1-20
950-1050
P/P
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]

2019-03-04meta-author

Silicon carbide has a variety of crystal types, but the silicon crystal structure the market needed is mainly 4H-SiC. So the silicon carbide crystal growth in crystal types is a defect. To a certain extent, it can be distinguished by the naked eye. A more accurate measurement method for testing [...]

2021-04-27meta-author

PAM XIAMEN offers 4″ CZ Prime Silicon Wafer.
4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm), thickness = 200 ± 25 µm,
orientation (100)(+/-0.5度),
2-side polished,
p or n type (no matter) ,
? Ohm cm (no matter),
Particle: 0.33µm, <qty30
ttv ≤ [...]

2019-06-24meta-author

PAM XIAMEN offers 60+1mm FZ Si Ingot -5
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

2020-04-16meta-author

PAM XIAMEN offers Titanium Oxide TiO2 Crystal Substrates.
Main Parameters
Crystal structure
Tetragonal, Rutile
Unit cell constant
a=4.5936Å c=2.9582 Å
Density
4.26 (g/cm3)
Melting point
1870 ℃
Dielectric constants
dη/dT: a: -0.72×10^-6/k, c: -0.42×10^-6/k
Linear expansion coefficient
7.14 x 10-6 /℃ along a axis
9.19 x 10-6 /℃ along c axis
Hardness
7 (mohs)
Polishing
Single or double side polished
Size
5×5×10mm, 5×10×10mm, 10×10×0.5mm, other [...]

2019-03-15meta-author

PAM XIAMEN offers Si wafers.
Our clients often use the following spec for their soft lithography applications.
100mm P(100) 0-100 ohm-cm SSP 500um Test Grade
Not only can the above silicon wafers be used for soft lithography, our clients also use the wafers for PDMS micro-fluidic chip platforms [...]

2019-02-25meta-author