EPD for GaAs Substrate and Epitaxial Wafer

Q: Could you please advise guaranteed EPD for below substrate and epi?
Gallium Arsenide wafers, P/E 2″Ø×380±25µm,
LEC SI undoped GaAs:-[100]±0.5°, n-type Ro=(0.8E8-0.9E8)Ohmcm,
One-side-polished, back-side matte etched, 2 Flats,
LT-GaAs EPI: 1-2µm, Resistivity >1E7 Ohm-cm, Carrier lifetime <1ps,
Sealed under nitrogen in single wafer cassette.
A: Dislocation Density<1×10^6cm-2

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