PAM-XIAMEN Offers Epi service for GaAs-based laser wafers growth

PAM-XIAMEN Offers Epi service for GaAs-based laser wafers growth

Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of Epi service for GaAs-based laser wafers growth and other related products and services announced the new availability of size  3”  is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN‘s product line. Dr. Shaka, said, “We are pleased to offer Quantum Well Laser Structure to our customers including many who are developing better and more reliable for the basic active element (laser light source) of the Internet fiber optic communication. Our Laser diode epitaxial structure has excellent properties, quantum well lasers bases on gallium arsenide and indium phosphide wafers, lasers utilizing quantum wells and the discrete electron modes are fabricated by both MOVPE and MBE techniques, are produced at a variety of wavelengths from the ultraviolet to the THz regime. The shortest wavelength lasers rely on gallium nitride-based materials. The longest wavelength lasers rely on the quantum cascade laser design. Quantum well lasers have attracted a great deal of attention by their many advantages such as low threshold current density, excellent temperature feature, high modulation rate and wavelength adjustability etc. The availability improve boule growth and wafering processes.” and “Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our Epi service for GaAs-based laser wafers growth are natural by products of our ongoing efforts, currently we are devoted to continuously develop more reliable products.”

PAM-XIAMEN’s improved GaAs-based laser wafers product line has benefited from strong tech, support from Native University and Laboratory Center.

Now it shows an example as follows:

808nm InGaAsP/InP MQW Laser structure

Layer Material X Y Strain tolerance PL Thickness Type Level
(ppm) (nm) (um) (cm-3)
8 GaAs 0.1 P >2.00E19
7 GaIn(x)P 0.49 +/-500 0.05 P
6 [Al(x)Ga]In(y)P 0.3 0.49 +/-500r 1 P
5 GaIn(x)P 0.49 +/-500 0.5 U/D
4 GaAs(x)P 0.86 +/-500 798 0.013 U/D
3 GaIn(x)P 0.49 +/-500 0.5 U/D
2 [Al(x)Ga]In(y)P 0.3 0.49 +/-500 1 N
1 GaAs 0.5 N
0 GaAs substrate N

About Xiamen Powerway Advanced Material Co., Ltd

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

About Quantum Well Laser Structure

A quantum well laser is a laser diode in which the active region of the device is so narrow that quantum confinement occurs. Laser diodes are formed in compound semiconductor materials that (quite unlike silicon) are able to emit light efficiently. The wavelength of the light emitted by a quantum well laser is determined by the width of the active region rather than just the bandgap of the material from which it is constructed.[1] This means that much longer wavelengths can be obtained from quantum well lasers than from conventional laser diodes using a particular semiconductor material. The efficiency of a quantum well laser is also greater than a conventional laser diode due to the stepwise form of its density of states function.

Q&A

C: We’re looking for a supplier of GaAs-based epitaxial laser wafers for the following wavelength ranges: 780nm and 808nm. Suitable substrate dimensions are 2” or 3” (preferred). Please let me know if your company has expertise in fabrication of such laser wafers. If yes, please let me know if you may provide generic designs for our consideration.

P: Thanks for your enquiry, yes we can offer, can you offer structure?

C: Thank you for your feedback. Please find 780nm and 808nm designs attached. Please let me know if designs are fine and let me also know what kind of testing from your side will be carried out to make sure the material quality is laser grade?

780nm laser structure

Layer Material X Y Strain tolerance PL Thickness Type Level
(ppm) (nm) (um) (cm-3)
8 GaAs 0.1 P >2.00E19
7 GaIn(x)P 0.49 +/-500 0.05 P
6 [Al(x)Ga]In(y)P 0.3 0.49 +/-500 1 P
5 GaIn(x)P 0.49 +/-500 0.5 U/D
4 GaAs(x)P 0.77 770 U/D
3 GaIn(x)P 0.49 +/-500 0.5 U/D
2 [Al(x)Ga]In(y)P 0.3 0.49 +/-500 1 N
1 GaAs 0.5 N
0 GaAs substrate N

808nm laser structure

Layer Material X Y Strain tolerance PL Thickness Type Level
(ppm) (nm) (um) (cm-3)
8 GaAs 0.1 P >2.00E19
7 GaIn(x)P 0.49 +/-500 0.05 P
6 [Al(x)Ga]In(y)P 0.3 0.49 +/-500r 1 P
5 GaIn(x)P 0.49 +/-500 0.5 U/D
4 GaAs(x)P 0.86 +/-500 798 0.013 U/D
3 GaIn(x)P 0.49 +/-500 0.5 U/D
2 [Al(x)Ga]In(y)P 0.3 0.49 +/-500 1 N
1 GaAs 0.5 N
0 GaAs substrate N

C: We can offer test report of PL of MQW and XRD of AlGaInP.

Key Words: Quantum Well Laser, Al Free, laser structure, MQW laser,

Quantum Well Laser Applications, working of quantum well laser,

single quantum well laser, Quantum Well Laser

For more information, please visit our website: https://www.powerwaywafer.com,

send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.

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