Epitaxial Silicon Wafer

Epitaxial Silicon Wafer

Silicon Epitaxial Wafer(Epi Wafer) is a layer of single crystal silicon deposited onto a single crystal silicon wafer(note: it is available to Grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline Silicon wafer,but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and the top epitaxial layer)

  • Description

Product Description

Epitaxial Silicon Wafer

Silicon Epitaxial Wafer(Epi Wafer) is a layer of single crystal silicon deposited onto a single crystal silicon wafer(note: it is available to Grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline Silicon wafer,but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and the top epitaxial layer)

The epitaxial layer can be doped, as it is deposited, to the precise doping concentration while continuing the substrate’s crystalline structure.

Epilayer resistivity: <1 ohm-cm up to 150 ohm-cm

Epilayer thickness: < 1 um up to 150 um

Structure: N/N+, N-/N/N+, N/P/N+, N/N+/P-,  N/P/P+, P/P+, P-/P/P+.

Wafer Application: Digital, Linear, Power, MOS, BiCMOS Devices.

Our advantages at a glance

1.Advanced epitaxy growth equipment and test equipment.

2.Offer the highest quality with low defect density and good surface roughness.

3.Strong research team support and technology support for our customers

 

6″ Wafer specification:

Item Specification
Substrate Sub spec No.
Ingot growth method CZ
Conductivity type N
Dopant As
Orientation (100)±0.5°
Resistivity ≤0.005Ohm.cm
RRG ≤15%
[Oi] Content 8~18 ppma
Diameter 150±0.2 mm
Primary Flat Length 55~60 mm
Primary Flat Location {110}±1°
Secondly Flat Length semi
Secondly Flat Location semi
Thickness 625±15 um
Backside Characteristics:
1、BSD/Poly-Si(A) 1.BSD
2、SIO2 2.LTO:5000±500 A
3、Edge Exclusion 3.EE:?0.6 mm
Laser Marking NONE
Front surface Mirror polished
Epi Structure N/N+
Dopant Phos
Thickness 3±0.2 um
Thk.Uniformity ≤5 %
Measurement Position Center(1 pt) 10mm from edge(4 pts @90 degrees)
Calculation [Tmax-Tmin]÷[[Tmax+Tmin]X 100%
Resistivity 2.5±0.2 Ohm.cm
Res.Uniformity ≤5 %
Measurement Position Center(1 pt) 10mm from edge(4 pts @90 degrees)
Calculation [Rmax-Rmin]÷[[Rmax+Rmin]X 100%
Stack fault Density ≤2(ea/cm2)
Haze NONE
Scratches NONE
Craters、Orange Peel、 NONE
Edge Crown ≤1/3 Epi thickness
Slip(mm) Total Length ≤ 1Dia
Foreign Matter NONE
Back Surface Contamination NONE
Total Point Defects(particle) ≤30@0.3um

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