PAM XIAMEN offers 2″CZ Prime Silicon Wafer-4
Silicon wafer
Dia: 2”diameter
thickness: 280±25mm
Type: P-type (100)
Polished: one side polished
Resistivity1-10Ωcm
For more information, send us email at [email protected] and [email protected]
2021-03-16meta-author
PAM XIAMEN offers MgO Magnesium Oxide Single Crystal.
High quality MgO magnesium oxide crystals are used are used widely for various thin film applications. Customized MgO crystal substrates are available upon request.
1.Specification of MgO Magnesium Oxide Single Crystal
Main Parameters
Growth Method
Special Arc Melting
Crystal Structure
Cubic
Unit cell constant
a = [...]
2019-03-14meta-author
PAM XIAMEN offers 4″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
4″Øx400μm
n- Si:As[111]
0.001-0.005
P/E
21
n- Si:P
0.15
n/n+
4″Øx360μm
n- Si:Sb[111]
0.005-0.020
P/E
20
n- Si:P
360 – 440
n/n+
4″Øx400μm
p- Si:B[111]
0.01-0.10
P/E
6.5
p- Si:B
3.6±10%
P/P/P+
4″Øx400μm
p- Si:B[111]
0.01-0.10
P/E
22±1.5
p- Si:B
300±50
P/P/P+
4″Øx525μm
p- Si:B[111]
0.01-0.02
P/E
8.1±1
p- Si:B
4.5±10%
P/P/P+
4″Øx525μm
p- Si:B[111]
0.01-0.02
P/E
6.85±0.75
p- Si:B
0.75±0.15
P/P/P+
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
10.5
p- Si:B
570±10%
p/p+
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
20
p- Si:B
0.25±10%
P/P+
4″Øx525μm
p- Si:B[111]
0.001-0.005
P/E
20
p- Si:B
175±10%
P/P+
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
21
p- Si:B
150 ±10%
P/P+
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
23
p- Si:B
80±10%
P/P+
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
23
p- Si:B
200±10%
P/P+
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
32
p- Si:B
600 ±10%
P/P+
4″Øx440μm
p- Si:B[111]
0.01-0.02
P/E
32.5
p- Si:B
100±10%
P/P+
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
40
p- Si:B
550 ±10%
P/P+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
20
p- Si:B
10±1.5
P/N/N+
4″Øx525μm
n- [...]
2019-03-08meta-author
Lithium niobate (LiNbO3) is a compound of niobium, lithium, and oxygen. Its single crystals are an important material for optical waveguides, mobile phones, piezoelectric sensors, optical modulators and various other linear and non-linear optical applications.Single crystals of lithium niobate can be grown using the [...]
2019-02-28meta-author
This paper reports the mechanical and electrical characteristics of Ge/Ge interfaces prepared by room-temperature surface-activated bonding (SAB). Bonded Ge/Ge wafer pairs with high bonding strength equivalent to that of the bulk material were achieved without any heat treatment. It was found that the bonding [...]
2018-11-12meta-author
M-Plane GaN Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy
M-plane GaN epilayers have been directly grown on m-plane sapphire substrates by hydride vapor phase epitaxy using a low temperature GaN nucleation layer. The m-plane GaN surface is optically smooth and mirror-like, with rms [...]
2013-04-12meta-author