GaN based LED Epitaxial Wafer
PAM-XIAMEN’s GaN(gallium nitride)-based LED epitaxial wafer is for ultra high brightness blue and green light emitting diodes (LED) and laser diodes (LD) application.
The LED epitaxial wafer is a substrate heated to an appropriate temperature. The LED wafer material is the cornerstone of the technology development for the semiconductor lighting industry. Different substrate materials require different LED epitaxial wafer growth technology, chip processing technology and device packaging technology. The substrate for LED epi wafer determines the development route of semiconductor lighting technology. To achieve luminous efficiency, epitaxial wafer suppliers pay more attention to GaN based LED epitaxial wafer, since the epitaxial wafer price is in low cost, and the epi wafer defect density is small. LED epi wafer advantage on GaN substrate is the realization of high efficiency, large area, single lamp and high power, which make the process technology simplify and improve the large yield rate. The development prospects of the LED epi wafer market are optimistic.
1. LED Wafer List
LED Epitaxial Wafer
As a LED epitaxial wafer manufacturer, PAM-XIAMEN can offer activated and unactivated GaN Epi LED wafer for LED and laser diodes (LD) application,such as For micro LED or ultra thin wafer or UV LED researches or LED manufacturers. LED epitaxial wafer on GaN is grown by MOCVD with PSS or flat sapphire for LCD back light, mobile, electronic or UV(ultraviolet), with blue or green or red emission, including InGaN/GaN active area and AlGaN layers with GaN well/AlGaN barrier for different chip sizes.
2. InGaN/GaN(gallium nitride) based LED Epitaxial Wafer
GaN on Al2O3-2” epi wafer Specification(LED Epitaxial wafer)
|White： 445～460 nm|
|Blue： 465～475 nm|
|Green： 510～530 nm|
1. Growth Technique – MOCVD
2.Wafer diameter: 50.8mm
3.Wafer substrate material: Patterned Sapphire Substrate(Al2O3) or Flat Sapphire
4.Wafer pattern size: 3X2X1.5μm
3. Wafer structure:
4. Wafer parameters to make chips:
|PAM1023A01||Blue||10mil x 23mil||Lighting|
|Vf = 2.8~3.4V||LCD backlight|
|Po = 18~25mW||Mobile appliances|
|Wd = 450~460nm||Consumer electronic|
|PAM454501||Blue||45mil x 45mil||Vf = 2.8~3.4V||General lighting|
|Po = 250~300mW||LCD backlight|
|Wd = 450~460nm||Outdoor display|
5. Application of LED epitaixal wafer:
*If you need to know more detail information of Blue LED Epitaxial Wafer, please contact with our sales departments
LCD back light
6. Specification of LED Epi Wafer as an example:
– size : 4 inch
– WD : 455 ± 10nm
– brightness : > 90mcd
– VF : < 3.3V
– n-GaN Thickness : <4.1㎛
– u-GaN thickness : <2.2㎛
– substrate : patterned sapphire substrate (PSS)
7.GaAs(Gallium arsenide)based LED Wafer Material:
Regarding GaAs LED wafer, they are grown by MOCVD,see below wavelength of GaAs LED wafer:
Yellow:587 ~ 592nm
Yellow/Green: 568 ~ 573nm
8. Definition of LED Epitaxial Wafer:
What we offer is bare LED epi wafer or not processed wafer without lithography processes, n- and metals contacts, etc. And you can fabricate the LED chip using your fabrication equipment for different application such as nano optoelectronics research.
For these detail GaAs LED wafer specs,please visit:GaAs Epi Wafer for LED
For UV LED wafer specs,please visit:UV LED Epi Wafer
For LED wafer on silicon specs,please visit:LED Wafer on Silicon
For Blue GaN LD Wafer specs,please visit: Blue GaN LD Wafer
For Violet GaN LD Wafer, please visit: 405nm GaN Laser Diode Wafer
For more foundry services, please visit: GaN Foundry Services for LED Fabrication
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Freestanding GaN substrate
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PAM-XIAMEN is manufacturing various types of epi wafer III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD. We supply custom GaAs epiwafer structures to meet customer specifications, please contact us for more information.
SiC Wafer Substrate
The company has a complete SiC(silicon carbide) wafer substrate production line integrating crystal growth, crystal processing, wafer processing, polishing, cleaning and testing. Nowadays we supply commercial 4H and 6H SiC wafers with semi insulation and conductivity in on-axis or off-axis, available size:5x5mm2,10x10mm2, 2”,3”,4” and 6”, breaking through key technologies such as defect suppression, seed crystal processing and rapid growth, promoting basic research and development related to silicon carbide epitaxy, devices, etc.
GaN HEMT Epitaxial Wafer
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PAM-XIAMEN offers Compound Semiconductor InSb wafer – Indium antimonide wafer which is grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111) or (100). Indium antimonide doped with isoelectronic(such as N doping) can reduce the defect density during the indium antimonide thin films manufacturing process.