Temperature dependent growth of InGaN/GaN single quantum well InGaN/GaN single quantum well (SQW) structures under various InGaN growth temperatures have been grown by metal organic chemical vapor deposition (MOCVD), the surface morphologies and optical properties are investigated. The radius of the typical V-pits on the [...]
2014-02-26meta-author
InGaN The Gallium Nitride Era is Coming Because of the smaller form factor, better thermal performance, and higher efficiency of gallium nitride (GaN) devices, the industry has been looking forward to it for a long time. In recent years, as GaN-on-SiC devices have begun to be [...]
2018-08-09meta-author
Single electron transistor (SET) is an important discovery in microelectronics science. Due to the ability to control the tunneling process of a single electron in a micro tunnel junction system, multiple functional devices can be designed using it. In modern submicron devices, the limiting factor [...]
2024-01-25meta-author
High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy A low-dislocation-density thick GaN layer was successfully grown using selective-area HVPE growth combined with epitaxial lateral overgrowth. The InGaN MQWsfabricated on this thick GaN layer showed superior optical properties compared with that on [...]
2013-05-02meta-author
PAM XIAMEN offers Au (epi) /Cr coated SiO2/Si substrate. Au (highly oriented polycrystalline) /Cr coated SiO2/Si substrate , 6″x0.675 mm,1sp P-type B-doped, Au(111)=150 nm, Cr=20nm Au (highly oriented polycrystalline) /Cr coated SiO2/Si substrate ,4″x0.525 mm,1sp P-type B-doped, Au(111)=50 nm, Cr=5 nm Au( highly oriented [...]
2019-04-26meta-author
We designed and fabricated AlGaN/GaN high-electron-mobility transistors (HEMTs) employing both a floating gate (FG) and a field plate (FP), which increase the breakdown voltage of AlGaN/GaN HEMTs significantly without sacrificing forward electric characteristics. The electric field strength at the gate–drain region of the proposed AlGaN/GaN HEMT [...]
2018-01-10meta-author