Obleas de silicio monocristalino de 6 ″ con óxido aislante

  • Casa
  • Noticias
  • Obleas de silicio monocristalino de 6 ″ con óxido aislante

Obleas de silicio monocristalino de 6 ″ con óxido aislante

PAM XIAMEN ofrece obleas de silicio monocristalino de 6 ″ con óxido aislante

Obleas de silicio monocristalino de 6 ″ con óxido aislante
Pulido: unilateral para microelectrónica
Espesor: 675 +/- 20 micrones
TTV <15 μm,
Deformación <35 μm
Tipo P
Orientación <100>
El espesor de la capa de óxido aislante es de 300 nm.
Resistencia de la placa base ≥ 10 ohmios * cm

Para más información, envíenos un correo electrónico asales@powerwaywafer.comypowerwaymaterial@gmail.com

2020-04-15

Compartir esta publicacion

Conexo Mensajes

Investigation of Te inclusions in CdZnTe crystalline material using Raman spectroscopy and IR techniques

IR images reveal that Te inclusions exist in CdZnTe crystal in the form of square, hexagonal and triangular shapes. The density of Te inclusions for sizes above 5 μm sharply varied from 2.27 × 103 cm−2 to 4.52 × 105 cm−2 with a consequent reduction in IR transmittance from ∼60.5% to ∼55% when the Te-rich volume increased [...]

2013-11-15metaautor , , ,
(10-11) Plane N-GaN Freestanding GaN Substrate

PAM-XIAMEN offers (10-11) Plane N-GaN Freestanding GaN Substrate: Item PAM-FS-GAN(10-11)-N Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation (10-11) plane off angle toward A-axis 0 ±0.5° (10-11) plane off angle toward C-axis -1 ±0.2° Conduction Type N-type / Si Doped Resistivity (300K) < 0.05 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤  5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room   For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

2020-08-20metaautor
Diamond Wafers

Diamond wafers from PAM-XIAMEN are wafer-scale products that are used to tap the huge potential of diamond materials, such as tribological testing, unique nano-scale processing applications and MEMS development. In the current diamond wafer market, there are three grade diamond wafer, Microelectronics Grade diamond wafer, Thermal [...]

2018-07-10metaautor
3″ Silicon Wafer-1

PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [110] ±0.5° 3″ 325 P/E FZ 100-200 SEMI Prime p-type Si:B [100] 3″ 380 P/E FZ 7,000-10,000 SEMI Prime p-type Si:B [100] 3″ 350 P/P FZ 1-5 SEMI Prime p-type Si:B [100] 3″ 160 ±10 P/P FZ 0.5-10.0 SEMI Tes, Soft cst, Scratched, unsealed defects. Can be repolished for additional fee p-type Si:B [100] 3″ 890 ±13 P/P FZ 0.5-10.0 SEMIt, TTV<8μm p-type Si:B [111] ±0.5° 3″ 380 P/E FZ 8,000-10,000 SEMI TEST (has scratches), in hard cst p-type Si:B [111] ±0.5° 3″ 475 P/E FZ >4,400 SEMI Prime, TTV<5μm p-type Si:B [111] ±0.25° 3″ 400 P/E FZ >100 SEMI Prime n-type Si:P [100] 3″ 380 P/P FZ 7,000-18,000 SEMI Prime n-type [...]

2019-03-06metaautor
InSb Wafer

PAM XIAMEN offers InSb Wafer. InSb Ge-doped InSb (100) 10x10x 0.45 mm, P type, Ge doped, 1 side polished InSb (100) 5x5x 0.45 mm, P type, Ge doped, 1 side polished-1 InSb (100) 2″ dia x 0.45 mm, P type, Ge doped , 1 [...]

2019-05-07metaautor
2″CZ Prime Silicon Wafer-2

PAM XIAMEN offers 2″CZ Prime Silicon Wafer-2 2″ Silicon Wafer Resistivity 1-5Ωcm P type, Boron doped Orientation (100) Thickness 300±25μm SSP SEMI Prime, 1Flat, Hard cst For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com  

2020-06-11metaautor