PAM XIAMEN offers 6″FZ Silicon Wafer.
Silicon wafers, per SEMI Prime,
P/E 6″ {150.0±0.5mm}Ø×1,000±25µm,
FZ p-type Si:B[111]±0.5°, Ro > 5,000 Ohmcm,
One-side-polished, Particles: <10@≥0.3µm,
back-side etched, One SEMI Flat (57.5mm), Edges: rounded,
Sealed in Empak or equivalent cassette,
BOW<30µm, MCCLifetime>1000µs.
For more information, please [...]
2019-08-22meta-author
LT GaAs semi-insulating layers applied in vertical-cavity surface-emitting lasers
In this paper we report on the optimization of the MBE growth process for obtaining semi-insulating LT-GaAs layers applied in vertical-cavity surface-emitting-lasers. The technological conditions for growingLT-GaAs layers have been found and test processes for growing the laser structure [...]
PAM-PA01 series are pixel electrode structured detectors based on CZT crystal. They can detect X-ray, γ-ray and imaging. They have a high energy and space resolution.
1. Specification of CZT High Resolution Pixel Detector
Material
CdZnTe
Density
5.8g/cm3
Volume resistance
>1010Ω.cm
Dimensions
10.0×10.0mm2
Thickness
2.0mm
5.0mm
Pixel size
1.1×1.1mm2
Pixel array
8×8
Electrode material
Au
Operation temperature
-20℃-+40℃
Energy range
20KeV~700MeV
20KeV~700MeV
Energy resolution(22℃)
<6%@59.5KeV
<4.5%@122KeV
<3%@662KeV
Defective pixel(DP)
10℃~40℃
Storage temperture
20%-80%
Remarks
Customized available
2. Spectrum of [...]
2019-04-24meta-author
Distribution of defects and impurities in gallium arsenide wafers after surface gettering
Gettering of defects and impurities in GaAs using a heat treatment (HT) of the yttrium-coated wafers has been investigated. The gettering has been established to be of a volume character. That has allows [...]
PAM XIAMEN offers P-type Silicon. Please send us emails if you need other specs and quantity.
See below for a short list of our p-type silicon substrates.
P-type Silicon
Si 50.8mm P-type Boron Doped (100) 0.001-0.005 ohm-cm 280um SSP In stock
Si 76.2mm P-type Boron Doped (100) 1-10 [...]
2019-02-13meta-author
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
8
DSP
Phosphorus
N
100
0,0 ± 0,0
110 ± 1
0.0 ± 1.0°
1 – 5 Ohmcm
200 ± 0.5 mm
650 ± 5 µm
20
3
35
8
DSP
Phosphorus
N
100
0,0 ± 0,0
110 ± 1
0.0 ± 0.5°
0.7 – 5.0 [...]
2019-02-25meta-author