Obleas de diodo láser de 905 nm

Obleas de diodo láser de 905 nm

PAM XIAMEN offers 905nm laser diode wafers.

1. Specs of 905nm Laser Diode Wafer

1.1 Three Stark 905nm Pulse LD Structures PAM211202-GAINAS

Capa Composición Espesor Concentration
13 P+ GaAs / /
12 P-AlGaAs cladding + waveguide d~1.6um /
11 Undoped GaInAs QW  PL:880~900nm / /
10 N- AlGaAs cladding + waveguide /
9 N++ GaAs/P++ GaAs Tunnel junction / /
8 P- AlGaAs cladding + waveguide /
7 Undoped GaInAs QW     PL:880~900nm / /
6 N- AlGaAs cladding + waveguide d~2.4um /
5 N++ GaAs/P++ GaAs Tunnel junction
4 P- AlGaAs cladding + waveguide
3 Undoped GaInAs QW     PL:880~900nm
2 N- AlGaAs cladding + waveguide
1 N GaAs / /
3” N GaAs substrate 4 off <111>A 450um (0.6~4) x 1018

 

1.2 Single stark 905nm pulse LD structures

P+ GaAs P=0.5-2×1020, d~0.15μm
P- AlGaAs cladding, d~1.0μm
Undoped AlGaAs waveguide d~0.4μm
Undoped GaInAs QW d~8nm, PL:890-900nm
Undoped AlGaAs waveguide d~0.7μm
N- AlGaAs cladding, d~1.2μm
N GaAs, d~0.5μm
2” or 3” N GaAs substrate N=(0.6~4)×1018 d=350~625μm 15°off <111>A

1.3Two stark 905nm pulse LD structures

P+ GaAs P=0.5-2×1020, d~0.15μm
P- AlGaAs cladding, d~1.0μm
Undoped AlGaAs waveguide d~0.4μm
Undoped GaInAs QW d~8nm, PL:890-900nm
Undoped AlGaAs waveguide d~0.7μm
N- AlGaAs cladding, d~1.2μm
N++GaAs/P++GaAs Tunnel junction
P- AlGaAs cladding, d~1.0μm
Undoped AlGaAs waveguide d~0.4μm
Undoped GaInAs QW d~8nm, PL:890-900nm
Undoped AlGaAs waveguide d~0.7μm
N- AlGaAs cladding, d~1.2μm
N GaAs, d~0.5μm
2” or 3” N GaAs substrate N=(0.6~4)×1018 d=350~625μm 15°off <111>A

 

2. About GaInAs/GaAs Structure of Laser Diode Wafer for Emitting 905nm Wavelength

The longest emission wavelength of the AIGaAs/GaAs system is about 860nm. In order to obtain longer wavelength infrared light, people began to study the GaInAs material system that must have a lattice mismatch with GaAs.

GaInAs/GaAs strained quantum well materials are widely used in the preparation of lasers with emission wavelengths greater than 900nm, light-emitting diode devices, and multi-junction solar cells. At the same time, based on the idea of strain balance, the InGaAs/GaAsP strain compensation multiple quantum well structure was developed, that is, by alternately growing tensile strain and compressive strain epitaxial layers. The lattice constant of the entire structure is matched with the lattice constant of the substrate, and the energy band structure is consistent with the designed luminous performance, which greatly improves the photoelectric performance of the device made on laser diode wafer.

Para obtener más información, por favor contáctenos por correo electrónico avictorchan@powerwaywafer.comypowerwaymaterial@gmail.com.

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