Silicon wafers with various metal depositions are for sale in sizes from 2 inch to 12 inch. Metal deposition on silicon wafer is usually processing on the substrate surface, and thickness of the substrate typically is 300um~700um. A wafer list is shown below for [...]
2021-10-13meta-author
PAM XIAMEN offers 4″ Epitaxial Silicon Wafer. If necessary, we can do SRP (spreading resistance profile) test for you.
Item
Parameter
Spec
Unit
1
Growth Method
CZ
2
Diameter
100+/-0.5
mm
3
Type-Dopant
P- Boron
4
Resistivity
0.002 – 0.003
ohm-cm
5
Resistivity Radial Variation
<10
%
6
Crystal Orientation
<111> 4 +/- 0.5
degree
7
Primary Flat
Orientation
Semi
degree
Length
Semi
mm
8
Secondary Flat
Orientation
Semi
degree
Length
semi
mm
9
Thickness
525 +/- 25
μm
10
TTV
≦10
μm
11
Bow
≦40
μm
12
Warp
≦40
μm
13
Front Surface
polished
14
Backside
etched
—
5000 +/-10% Angstoms SiO2
15
Surface Appearance
no Cratches, haze, edge chips, orange peel, defects,contamination
—
16
Edge [...]
2021-03-16meta-author
PAM XIAMEN offers Yb YAG Ytterbium (Yb) doped Yttrium Aluminium Garnet Laser Crystal.
Ytterbium – Yb:YAG is a very promising laser crystal and is more suitable for diode-pumping than the commonly used Nd-doped YAG crystals. Compared with the traditional Nd:YAG crystal, Yb:YAG crystal has a much wider [...]
2019-03-15meta-author
PAM XIAMEN offers KBr Potassium Bromide Crystal Substrate.
To better serve you, we would like to discuss your specific requirement, Please Contact Us for a quote.
Main parameters
Crystal structure
M3
Growth method
crystallization process
Crystal lattice parameters
a=5.596Å
Density
2.75(g/cm3)
Index of refraction
1.49025
Surface roughness
< 5 [...]
2019-03-12meta-author
In the present work, dislocation arrays are investigated in float zone (FZ) grown silicon wafers by the light beam induced current (LBIC) mapping technique at different wavelengths and by deep level transient spectroscopy (DLTS). The LBIC technique appears to be able to recognize and [...]
PAM-XIAMEN offers PSS patterned sapphire substrate for high brightness GaN based LED EPI growing application. The patterned sapphire substrate wafer is to grow a dry etching mask on the sapphire substrate. The mask is engraved by a standard photolithography process. Then, the sapphire is etched by ICP etching [...]
2021-04-28meta-author