Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InAlAs and other related products and services announced the new availability of size 2” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.
Dr. Shaka, said, “We are [...]
2017-10-25meta-author
PAM XIAMEN offers4″ Silicon EPI Wafer-6
4″ Si epi wafer
Structure：
(Top layer intrinsic Si / Middle layer Phosphorus Doped / Ion Implantation / Si substrate)
Top layer intrinsic Si:
Resistivity≥50Ωcm,
Thickness 5μm,
Residual carrier concentration<1×1014/cm3
Middle layer Phosphorus Doped：
Resistivity around 0.025Ωcm (Phosphorous concentration 7×017/cm3),
Thickness 20μm,
Residual carrier concentration<2.1×1013/cm3
Layer with Ion Implantation: handled [...]
2019-11-01meta-author
AlScN (Aluminum Scandium Nitride) thin film on sapphire or silicon substrate can be provided by PAM-XIAMEN for the application of SAW / FBAR filters, optoelectronic devices, power devices and MEMS. AlScN, a III-V semiconductor based ferroelectric, is a promising semiconductor material at present, which [...]
2021-09-10meta-author
PAM XIAMEN offers KTaO3 Potassium Tantalate Crystal Substrates.
Formula
KTaO3
Point group
m3m
Cell parameters
0.3984nm
Melting point
1352.2 ℃
Density
7.025 g/cm3
Mohs hardness
6
Growth method
Czochralski method
Refractive index
2.226@633nm, 2.152@1539nm
Coefficient of thermal expansion
4.027 x 10-6/K
Specific heat (temperature J/(K g)
0.378
Transparent bands (nm)
380~4000
Crystal orientation
<100>, <110>, <111>
Regular size
20x20x0.5mm, 10x10x0.5mm, 5x5x0.5mm, other sizes are available upon request
For more information, please visit our website: [...]
2019-03-12meta-author
PAM-XIAMEN offers GaN on Si HEMT wafer for Power, D-mode. Because of the heterojunction structure of GaN and AlGaN, the GaN HEMT on Si Substrate structure has one important property of high electron mobility. The HEMT Si wafers can be for device fabrication as well as [...]
2019-05-17meta-author
PAM XIAMEN offers4″ CZ Prime Silicon Wafer Thickness = 200 ± 25 µm-3
4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm), thickness = 200 ± 25 µm,
orientation (100)(+/-0.5°),
2-side polished,
p or n type (no matter) ,
? Ohm cm (no matter),
Particle: 0.33µm, <qty30
ttv ≤ 10um，warp ≤30um
One [...]
2019-09-20meta-author
