PAM-XIAMEN offers high-quality AlN on silicon and sapphire wafer, which is AlN epitaxial thin film grown on single crystal sapphire/Si substrate, that way can provide the most cost-effective solution to grow high quality III-V nitride thin film.
1. Wafer List:
Undoped AlN Template on Sapphire, 2″, AlN layer1um or 3~5um – single side polished or double side polished
Undoped AlN Template on Silicon, 2″, AlN layer1um – single side polished
Undoped AlN Template on Sapphire, 4″, AlN layer200um – single side polished or double side polished
Undoped AlN Template on Silicon, 4″, AlN layer1um – single side polished PAM190813-ALN
2″ 25nm AlN on (111) Si
6″ 25nm AlN on (111) Si
Undoped AlN Template on 4″ Silicon ( Si <111>, P type, B-doped ) 4″x 500 nm
Remark:
There are two ways to make AlN templates on silicon, one way is to grow them by MOCVD, another way is to coat them, but anyway, the thickness is around 200nm, if too thick, the BOW would be big.
Question: How to choose silicon substrate when growing AlN film?
Answer: choose silicon at (111)orientation, also the resistivity should be higher.
2. Specification of AlN on Sapphire
2.1 2″ AlN Template on Sapphire
Item | PAM-AlNT-S |
Diameter | Dia.50.8mm ± 1mm |
Conduction Type | Semi-insulating |
Thickness: | 1um, 3~5um |
Substrate: | Sapphire |
Orientation : | C-axis(0001)+/-1° |
Orientation Flat | A-plane |
XRD FWHM of (0002) | <200 arcsec. |
Surface Roughness | <2nm |
Useable Surface Area | ≥90% |
Polish Condition | Single side polished or double side polished. |
Package | Single wafer container, under a nitrogen atmosphere, in a class 100 clean room environment. |
2.2 AlN on Sapphire Template 4″
Item | PAM210407-G-SA |
Diameter | Dia.100mm ± 1mm |
Conduction Type | Semi-insulating |
Thickness: | 200um |
Substrate: | Sapphire |
Orientation : | C-axis(0001)+/-1° |
Orientation Flat | A-plane |
XRD FWHM of (0002) | <400 arcsec. |
Surface Roughness | <2nm |
Useable Surface Area | ≥90% |
Polish Condition | Single side polished or double side polished. |
Package | Single wafer container, under a nitrogen atmosphere, in a class 100 clean room environment. |
AFM micrographs of the AlN films on sapphire:
3. Specification of AlN on Silicon Wafer
3.1 Aluminum Nitride Wafer on Silicon Substrate by Growth (PAM210712-ALN)
Item: PAM-AlN-100-SI
Dimension:100.0±0.2mm
Conduction Type:Semi-Insulating
Thickness:100-200nm
AlN Orientation: C plane(0001)
(0002) FWHM (arcsec)<=1050
Substrate: Silicon substrate,(100), 500+/-25um
Crack: None
Surface roughness:(5x5um) Ra < 1nm
Single side polished(SSP)
TTV<7um
Warp<30um
Bow<15um
Package: Each wafer in wafer container, packed in a 100 cleanroom.
3.2 AlN on Silicon Wafer by Coating
* 2″ 25nm AlN on (111) Si
* 6″ 25nm AlN on (111) Si
* Undoped AlN Template on 2″ Silicon ( Si <111> N type ) 2″x 500 nm
Detail Specification:
AlN Template on Silicon
Nominal AlN thickness: 500nm ±10%, one side coated, undoped AlN film
Back surface: silicon N-type
AlN orientation: C-plane (0001)
Wafer base: Silicon [111] N type, 2″ dia x 0.5 mm, one side polished
Undoped AlN Template on 4″ Silicon ( Si <111>, P type, B-doped ) 4″x 500 nm
Features of AlN/Si Wafer:
High uniformity and good repeatability;
crack-free
Application of AlN/Si Wafer:
Suitable for FBAR and SAW
We also can grow template wafers of 200nm AlN on Si(111) to make many devices. Therein, we can use it for piezoelectric resonators to compare Q loss between sputtered and epitaxially grown AlN.
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com.