Noticias

Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate

Thermal oxides on the Ga-face of low defect density bulk gallium nitride (GaN) were controllably produced under varying conditions and subsequently analyzed. The thermal oxidation was performed in a dry oxygen atmosphere at different temperatures and different oxidation times. Each oxide layer was identified as the monoclinic β-Ga2O3 by [...]

2013-09-09 Lee mas...

Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy

Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy Minority- and majority-carrier traps were studied in GaN pn junctions grown homoepitaxially by MOCVD on n+ GaN substrates. Two majority-carrier traps (MA1,MA2) and three minority-carrier traps (MI1, MI2, MI3) were detected by deep-level [...]

2013-09-06 Lee mas...

Dislocations in Gan Grown on Silicon

In order to understand dislocations in GaN grown on silicon using metal organic chemical vapor deposition (MOCVD), two samples with different film thickness were grown. The distribution of dislocations and its influence on epitaxial layer were studied. Wet etching can effectively reveal the dislocations in GaN, and the hexagonal etch pits [...]

2013-09-05 Lee mas...

Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process

MOS SiO2/GaN structures were fabricated with different surface preparation and different PECVD processes for the dielectric thin film deposition (ECR-PECVD and ICP-PECVD in continuous and pulsed modes). On the basis of C-V curves, the surface preparation steps, involving chemical etching with BOE, UV-Ozone oxidation and oxygen plasma oxidation, were [...]

2013-09-04 Lee mas...

Resistivity Control in Unintentionally Doped GaN Films Grown on Si (111) Substrates by MOCVD

Unintentionally doped GaN were grown on Si (111) substrates by metal organic chemical vapor deposition (MOCVD). The high-resolution X-ray diffraction (HRXRD) and Lehighton contactless sheet resistance measuring systems were employed to characterize the quality and sheet resistance (Rs) of GaN epilayer. The threading dislocation density (TDD) was estimated by calculating [...]

2013-09-02 Lee mas...

Vapor phase decomposition–droplet collection–total reflection X-ray fluorescence spectrometry for metallic contamination analysis on Ge wafers

Ge substrates are recently being reconsidered as a candidate material for the replacement of Si substrates in advanced semiconductor devices. The reintroduction of this material requires reengineering of the standard IC processing steps. In this paper, we present the extension of the methodology of vapor phase decomposition–droplet collection–total reflection [...]

2013-08-30 Lee mas...

UV light stabilizers market

Fabrication of ZnO nanorod/p-GaN high-brightness UV LED by microwave-assisted chemical bath deposition with Zn(OH)2–PVA nanocomposites as seed layer Chemical solution deposition is a low-temperature and possibly the lowest-cost method of growing ZnO nanorods on a GaN substrate. However, most reported methods leave an interface layer between the grown ZnO nanorods [...]

2013-08-01 Lee mas...

Measurement of threading dislocation densities in GaN by wet chemical etching

Measurement of threading dislocation densities in GaN by wet chemical etching We demonstrate a technique based on wet chemical etching that enables quick and accurate evaluation of edge- and screw/mixed-type threading dislocations (TDs) in GaN. Large and small etch pits are formed by phosphoric acid on the etched surfaces. The [...]

2013-05-16 Lee mas...