Xiamen Powerway Advanced Material Co.,Ltd. offers monocrystal or polycrystalline150mm Germanium (100) or (111) substrates for optical application or for epi-growth in microelectronics. You can buy germanium substrate in following specifications: 1. Gemanium Substrate Specifications No.1 Optically Polished Germanium Substrates PAM211025-GE Sl No’ Specifications Value 1 Material Germanium (Ge) Optical grade 2 Crystalline form Polycrystalline / Monocrystalline 3 Shape Circular Flat 4 Diameter 25 mm [...]
PAM XIAMEN offers Pyrolytic Boron Nitride. Performance PBN’s properties, its intrinsic purity, superior mechanical strength, and thermal stability make it a superb choice for high temperature furnace and electrical components; microwave and semiconductor components; and industry standardized crucibles for Gallium Arsenide Crystal production. Good [...]
2019-05-14meta-author
AlxIn1-xP is a ternary semiconductor material grown with X composition in the range of 0.5~0.52, which is lattice matched to GaAs. AlxIn1-xP is commonly used as a window layer in high-bandgap III-V solar cells, where it is responsible for reducing surface recombination by reflecting [...]
PAM XIAMEN offers high-quality Al2O3 (Sapphire). R-Plane (1-102) Square Al2O3(11-02) substrate Al2O3- Sapphire Wafe, R Plane, 5x5x0.5mm, 1SP Al2O3-Sapphire Wafe, R Plane, 5x5x0.5mm, 2SP Al2O3- Sapphire Wafer, R Plane, 10x10x0.5mm, 1SP Al2O3-Sapphire Wafer, R Plane, 10x10x0.5mm, 2SP Al2O3- Sapphire Wafer, R Plane, 10x10x1.0mm, 1SP Al2O3-Sapphire Wafe, R Plane, 0.5″x0.5″x0.5 [...]
2019-04-16meta-author
PAM XIAMEN offers test grade silicon wafers Below is just a short list of the test grade silicon substrates that we have in stock! Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp 6 DSP Antimony N+ 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 0.01 – 0.02 Ohmcm 150 ± 0.2 mm 300 ± 10 µm 30 10 30 6 DSP Arsenic N+ 100 57,5 ± 2,5 110 ± 1 0.0 [...]
2019-02-25meta-author
GaAs pn diodes with heavily carbon-doped p-type GaAs grown by MOMBE were fabricated. The I-V and C-V characteristics were not significantly affected by the hole concentration of the p-GaAs although a lattice mismatch at the junction generates misfit dislocations. A good I-V characteristic with [...]
2019-01-14meta-author