PAM-XIAMEN can offer FZ neutron transmutation doping (NTD) silicon wafer with a uniform doping concentration and uniform radial resistivity distribution. At present, silicon material is still the most important basic material in the electronic information industry. More than 95% of semiconductor devices and more than 99% of integrated circuits are made of silicon materials. It is foreseeable that in the next few decades, high-end silicon single crystal materials will be an important cornerstone of the development of the electronic information industry. More information about the FZ NTD silicon wafer is listed in the following:

1. Specifications of FZ NTD Silicon Wafer (PAM-20210514 FZNTD)

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2. FZ Neutron Transmutation Doping Silicon Wafer List

3. What is a NTD Process?

NTD is a technology that uses neutron irradiation to dope materials. Its biggest advantage is that the concentration of doped impurities is very uniform. The dopant is completely uniformly distributed, and there is no difference between the maximum and minimum dopant concentration, making the devices reach the perfect performance.

The semiconductor material is irradiated with neutrons to make part of the atoms trapped with neutrons and then decay into another required atom (dopant) to achieve the doping process. The pure P-type single crystal silicon material undergoes a nuclear reaction under thermal neutron irradiation, and the original single crystal silicon is doped with phosphorus due to the appearance of the decay product 31P, thereby obtaining a high-resistance N-type single crystal silicon material. Since the resistivity uniformity (including the uniformity of the cross section) is good, and the unevenness can be less than 5%, FZ NTD silicon wafer is far better than the conventional FZ single crystal silicon material. So FZ NTD silicon wafer is very beneficial to improve the performance of semiconductor detectors.

4. FZ NTD Silicon Wafer Application

The FZ NTD silicon single crystal is mainly used in power stations, new energy vehicles, transformer converter parts and other fields. Take the application in target camera tubes for example, the application of FZ neutron transmutation doping silicon wafer is the preparation of silicon target camera tubes. The silicon target is a multi-diode array composed of more than 800,000 diodes. The uniformity of the silicon material is required to be very strict, and there will be no microscopic doping fluctuations. The yield rate is very low when the general FZ silicon wafer is used, while the FZ NTD silicon single crystal can greatly increase the yield rate.

In short, the FZ NTD silicon wafer is very promising. It breaks through the traditional method of preparing silicon single crystals and brings new vitality to the silicon material process. It is believed that in the near future, the FZ NTD silicon wafer market share will increase rapidly.

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com.