PAM XIAMEN offers 4″Silicon Ignot.
Silicon ingot, per SEMI, G 4″Ø (Diameter 100.5±0.3mm),
FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 20,000 Ohmcm,
Ground Ingot, NO Flats. Lifetime>1,000us,
Ox/Carbon <1E16/cc.
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found [...]
2019-07-05meta-author
PAM XIAMEN offers single crystal undoped or Ga-doped ZnO wafer substrate, which is grown by hydrothermal method under high pressure.There are two structures mainly in ZnO wafer: Hexagonal wurtzite and cubic zinc blende, what we offered is Hexagonal wurtzite.
1.Properties of ZnO Wafer:
1.1 General Properties [...]
2019-05-21meta-author
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of High Purity Semi-insulating SiC substrate and other related products and services announced the new availability of size 2”&3”&4”&6” is on mass production by PVT. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. [...]
2018-05-04meta-author
Highlights
•The barrier controlled trapping model was developed around extended defects.
•Electron mobility and E-field distribution were distorted by space charge depletion region.
•Extended defects act as a recombination-activated region.
•The relationships between extended defects and detector performance were established.
Transient current techniques using alpha particle source were utilized [...]
The growth of cubic silicon carbide on silicon, namely 3C-SiC/Si, has been extensively studied at the University of South Florida over the past decade and numerous electronic and biomedical applications explored using this material system. The key step to 3C-SiC devices is the growth [...]
2020-03-17meta-author
PAM XIAMEN offers (100) orientation Silicon Substrates.
Below is just a small selection. Let us know if you can use or if we can quote you on another spec.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2841
Intrinsic Si:-
[100]
4″
300
P/E
FZ 16,000-20,000
SEMI Prime, 1Flat, Empak cst, Back-side polish is imperfect
PAM2842
Intrinsic Si:-
[100]
4″
500
P/E
FZ 13,000-20,000
SEMI Prime, 1Flat, Empak cst, TTV<5μm, [...]
2019-02-22meta-author