PAM-XIAMEN can offered SiC wafers, specific specifications and parameters can be found in: https://www.powerwaywafer.com/sic-wafer
4H-SiC single crystal has excellent characteristics such as wide bandgap, high carrier mobility, high thermal conductivity, and good stability. It has broad application prospects in high-power electronics, radio frequency/microwave electronics, and quantum information. [...]
2024-03-15meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
76.2
P
Boron
CZ
-100
.001-.005
350-400
P/E
PRIME
76.2
P
Boron
CZ
-100
.005-.02
350-400
P/E
PRIME
76.2
P
Boron
FZ
-100
>3000
350-400
P/E
PRIME
76.2
P
Boron
CZ
-100
1-20
350-400
P/E
PRIME
76.2
P
Boron
CZ
-100
1-20
350-400
P/E/DTOx
PRIME
76.2
P
Boron
CZ
-100
1-20
350-400
P/E/Ni
PRIME
76.2
P
Boron
CZ
-100
1-20
350-400
P/E/WTOx
76.2
P
Boron
CZ
-100
1-20
450-500
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
500-550
P/E
PRIME
76.2
P
Boron
CZ
-100
1-10
825-875
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
850-1000
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
1000-1050
P/E
PRIME
76.2
P
Boron
CZ
-111
1-20
300-350
P/P
PRIME
76.2
P
Boron
CZ
-111
1-20
350-400
P/E
PRIME
76.2
P
Boron
CZ
-110
>100
275-325
P/P
PRIME
76.2
P
Boron
CZ
-110
1-20
350-400
P/E
PRIME
76.2
P
Boron
CZ
-110
100-200
800-850
P/P
PRIME
76.2
Any
Any
CZ
Any
Any
250-500
P/E
TEST
76.2
Any
Any
CZ
-100
1-100
330-430
P/E
PRIME
76.2
Intrinsic
Undoped
FZ
-100
> 15000
350-400
P/E
PRIME
76.2
Intrinsic
Undoped
FZ
-111
> 15000
350-400
P/E
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and [...]
2019-03-04meta-author
PAM XIAMEN offers 80+1mm FZ Si Ingot-1
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-03-13meta-author
PAM XIAMEN offers GaAs(100) Si- doped crystal .
GaAs – Growing Method: VGF (100) Si doped, N-type, 2″ dia x 0.35mm, 2sp,cc: (1.07-3.89) x 10^18 /cm^3
GaAs – Growing Method: VGF (100) Si doped, N-type, 2″ dia x 0.35mm, 1sp,cc: (1.65-3.59) x 10^18 /cm^3 [...]
2019-04-22meta-author
PAM XIAMEN offers MgO single crystal substrate.
MgO is an excellent single crystal substrate for thin films of Ferro magnetic, Photo-electronic and high Tc superconductor materials. PAM XIAMEN uses a special arc melting method to grow high purity MgO crystal in sizes up to [...]
2019-05-13meta-author
PAM XIAMEN offers 1″ silicon wafers.
If you don’t see what you need, pleaes email us your specs and quantity.
Item
Dia
Thickness (um)
Orientation
Type
Dopant
Resistivity
(Ohm-cm)
Polish
Remark
PAM1901
25.4mm
20000um
<111>
P
B
>1000
DSP
FZ
PAM1902
25.4mm
400um
<100>
P
B
ANY
SSP
Thickness is: 400+/-100um.
PAM1903
25.4mm
500um
<100>
ANY
SSP
Wafers have particles. Wafers sold “As-Is”.
PAM1904
25.4mm
280um
<111>
Undoped
Undoped
>2000
SSP
Intrinsic FZ
PAM1905
25.4mm
73.5um
<100>
Undoped
Undoped
>5000
DSP
FZ, Float Zone
PAM1906
25.4mm
500um
<100>
P
B
.01-.05
DSP
NO flats, COMPLETELY round. Minimum Order Quantity 5 wafers.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM1907
p-type Si:B
[100]
1″
280um
P/E
0-100 ohm-cm
SEMI, 1Flat, Soft cst
PAM1908
Intrinsic Si:-
[111]
1″
280um
P/E
FZ [...]
2019-02-21meta-author