Free-Standing & Bulk GaN Substrates for Laser Diode, LED and Power Electronics
LED applications will become the driving force of the bulk GaN market, surpassing established laser diode (LD) and emerging power electronics segments. However, major changes could occur if 4″ bulk GaN price gets [...]
2013-11-22meta-author
PAM XIAMEN offers 1″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
1″
475 ±10
E/E
FZ >500 {1,900-2,400}
n-type Si:P
[111] ±0.5°
1″
280
P/P
FZ 2,000-10,000
TTV<5μm
Intrinsic Si:-
[100]
1″
320
P/E
FZ >20,000
Prime
Intrinsic Si:-
[100]
1″
500
P/E
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
1″
160
P/P
FZ >10,000
Prime, TTV<8μm
Intrinsic Si:-
[100]
0.5″
12700
C/C
FZ >10,000
a set of 4 rods sealed in polyehtylene foil
Intrinsic Si:-
[111] ±0.5°
1″
500
P/P
FZ >15,000
SEMI Prime
Intrinsic Si:-
[111] ±0.5°
1″
1000
P/E
FZ 14,000-30,000
Cassettes of 7, 6, 6 wafers
Intrinsic Si:-
[111] ±2°
1″
27870
C/C
FZ >10,000
Single Crystal Silicon Rod, 0.39″ diameter × 27.87±0.1mm
p-type [...]
2019-03-08meta-author
Xiamen Powerway Advanced Material Co.,Ltd. offers monocrystal or polycrystalline150mm Germanium (100) or (111) substrates for optical application or for epi-growth in microelectronics. You can buy germanium substrate in following specifications:
1. Gemanium Substrate Specifications
No.1 Optically Polished Germanium Substrates
PAM211025-GE
Sl No’
Specifications
Value
1
Material
Germanium (Ge) Optical grade
2
Crystalline form
Polycrystalline / Monocrystalline
3
Shape
Circular Flat
4
Diameter
25 mm [...]
PAM-XIAMEN offers R-Plane(1-102) Sapphire Substrate, single side polished,please see below spec:
2”,R-Plane Sapphire Substrate with SSP
No
Item
Specification
1
Material
High Purity Al2O3
2
Diameter
50.8土0.1mm
3
Orientation
R-plane<1-102>土0.2°
4
Thickness
430土15um
5
TTV
≤15um
6
Bow
≤10um
7
Warp
≤15um
8
Primary Flat Length
16.0土1.0mm
9
Front suface Roughmess(Ra)
Ra≤0.3nm
10
Bock Surtace Roughness(Ra)
0.8~1.2um
11
Primary Flat Orienation
A-plane+0.2°
12
Surtace onentation
R-Plane土0.2°
13
Laser Mark
back side or front side or no laser mark
14
Package
25pcsCassede.Vacum-sealed,Nitrogen-flled,Class-100 Cleanroom
3”,R-Plane Sapphire Substrate with SSP
No
ltem
Specification
1
Material
High Purity Al2O3
2
Diameter
76.2土0.2mm
3
Thickness
350土25um
4
Orientation
R-plane<1-102>土0.2°
5
Primary Flat Orientation
45+2CCCW [...]
2020-05-21meta-author
PAM XIAMEN offers Silicon-Nitride on Corning 7980.
Silicon Nitride Film (LPCVD) on Corning 7980, Film thickness: 1.3um
Silicon Nitride Film (LPCVD) on Corning 7980, Film thickness: 1.3um ,10x10x0.5mm
Silicon Nitride Film (LPCVD) on Corning 7980, Film thickness: 1.3um ,10x5x0.5mm
For more information, please visit [...]
2019-04-29meta-author
The growth of cubic silicon carbide on silicon, namely 3C-SiC/Si, has been extensively studied at the University of South Florida over the past decade and numerous electronic and biomedical applications explored using this material system. The key step to 3C-SiC devices is the growth [...]
2020-03-17meta-author