PAM XIAMEN offers 4″ Prime Silicon Wafer Thickness 675 +/- 20 microns.
Wafers 4 inches in a diameter of monocrystalline silicon with an insulating oxide.
100 mm in diameter
The silicon substrate
orientation<100>
resistivity>10Ωcm
The insulating thermal oxidation film thickness 300nm
Polishing: one-sided for [...]
2019-07-02meta-author
PAM XIAMEN offers YSGG single crystal.
PAM XIAMEN is developing a series of doped GGG single crystal for nest generation Magneto-optical device.
Composition
GGG
YSGG
S-GGG(CaMgZr:GGG)
NGG
GYSGG
GSGG
(Cubic)
Gd3Ga5O12
Y3Sc2Ga3O5
Gd2.6Ca0.4Ga4.1Mg0.25Zr0.65O12
Nd3Ga5O12
Gd0.63Y2.37Sc2Ga3O12
Gd3Sc2Ga3O12
Lattice constant
12.376 Å
12.426 Å ,
12.480 Å
12.505Å
12.507 Å ,
12.554 Å ,
Diffraction(2θ)
51º7′
50º44′
50º43′
50º41′
50º40′
50º22′
Melting Point
~1800 oC
~1877℃
~1730 oC
~1550 oC
~1730 oC
~1730 oC
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [...]
2019-05-21meta-author
Gain characteristics and femto-second optical pulse response of 1550 nm-band multi-stacked QD-SOA grown on InP(311)B substrate
In this paper, we demonstrated 155 nm-band multi-stacked QD-SOA grown by the strain-compensation technique on an InP(311)B substrate, and evaluated the fundamental gain characteristics and the femto-second optical pulse response, [...]
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