PAM XIAMEN offers Diced Silicon Wafers.Wafer thickness could be customized.
PAM XIAMEN and our partners provide researchers with creative silicon wafer and other substrate dicing solutions. Using precision diamond saws we can cut a variety of hard brittle materials.
Our Services Include.
Small quantity wafer dicing at [...]
2019-02-20meta-author
PAM XIAMEN offers Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade ).
PAM XIAMEN supplies all kinds of Silicon wafer from 1″ ~ 8″ in diameter. Particularly specializing in fabrication of Si wafer with various special size and orientation.
2″ Diameter Wafers [...]
2019-05-15meta-author
PAM XIAMEN offers Photographic Film Letterpress
Accuracy Index
Accuracy/Grade
Accuracy1
Accuracy2
Line Number/Aperture Rate
400dpi/50%
350dpi/50%
Dot arrangement, Dot shape
45°/60°/75°/circle
45°/60°/75°/circle
Dimensional Accuracy
±0.085mm
±0.085mm
Substrate Thickness
1.50mm±0.15mm
1.50mm±0.15mm
Cutting Accuracy
±1mm
±1mm
Main application areas:
LCD-TN/STN/TFT collocated liquid drum glue, namely transfer PI directional liquid to ITO glass. LCD-TN/STN/TFT Photographic Film Letterpress
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [...]
2019-07-04meta-author
This study presents a new ultrathin SiC structure prepared by a catalyst free carbothermal method and post-sonication process. We have found that merging ultra-light 3D graphene foam and SiO together at high temperature leads to the formation of a complex SiC structure consisting of [...]
2019-01-09meta-author
PAM-01A1 series detectors are charged particles detector based on planar CZT crystal in a super small size. They have a high energy resolution in vacuum environment.
PAM-01A1 integrated custxomized CZT crystal and low noise charge sensitive preamplifier circuit. It can convert α-ray into exponential decay [...]
2019-04-24meta-author
PAM-XIAMEN, one of leading GaN substrate manufacturers, offers 10*10mm2 N-Type Freestanding GaN Substrate. To get more specific information please see the table below:
1. N-Type Freestanding GaN Substrate Specification
Item
PAM-FS-GAN-50-N
Dimension
10 x 10.5 mm2
Thickness
380+/-50um
Orientation
C plane (0001) off angle toward M-axis 0.35 ±0.15°
Conduction Type
N-type / Si Doped
Resistivity (300K)
< 0.05 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5x 106 cm-2 (calculated by CL)*
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in [...]
2020-08-17meta-author