Tag - InP/InGaAs/InP epi wafer

InP/InGaAs/InP epi wafer

When the In composition in the InGaAs material reaches 0.53, and Ga reaches 0.47, InGaAs / InP lattice matched makes it can form a heterojunction. The InGaAs / InP heterojunction structure utilizes the steps of the conduction band and valence band formed by the difference in the band gap [...]