PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
Intrinsic Si:-
[100]
4″
500
P/E
FZ 13,000-20,000
SEMI Prime, TTV<5μm, Front-side Prime polish, Back-side light polish
Intrinsic Si:-
[100]
4″
615 ±10
C/C
FZ >10,000
SEMI Prime
Intrinsic Si:-
[100]
4″
800
C/C
FZ >10,000
SEMI Prime
Intrinsic Si:-
[111] ±0.5°
4″
525
P/E
FZ >22,000
SEMI Prime
Intrinsic Si:-
[111] ±0.5°
4″
300
P/E
FZ 20,000-40,000
SEMI, TTV<5μm
Intrinsic Si:-
[111] ±0.5°
4″
450
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[111] ±0.5°
4″
500
P/E
FZ >20,000
SEMI Prime, Extra 3 free non-prime wafers included with 4 prime wafers
Intrinsic Si:-
[111] ±1.0°
4″
500
P/P
FZ >15,000
SEMI Prime, TTV<5μm
p-type Si:B
[110] ±0.25°
4″
525
P/E
5-10
SEMI [...]
2019-03-05meta-author
Abstract
The growth of thick epitaxial SiC layers needed for high-voltage, high-power devices is investigated with the chloride-based chemical vapor deposition. High growth rates exceeding 100 μm/h can be obtained, however to obtain device quality epilayers adjustments of the process parameters should be carried out appropriately [...]
2017-09-05meta-author
PAM XIAMEN offers 785nm laser diode wafers grown on GaAs substrate. Specific epi structure please see below:
1. Specifications of 785nm GaAs LD Epi Wafer
No.1 AlAs / AlGaAs LD Epi on GaAs PAM200420-LD
Layer
Material
Thickness
Notes
Layer 7
AlAs
–
Layer 6
GaAs
–
Layer 5
AlAs
–
Layer 4
AlGaAs
150 nm
Emitting at 785nm
Layer 3
AlAs
–
Layer 2
AlGaAs
–
Emitting at 700 nm
Layer [...]
2019-03-13meta-author
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of AlGaInP and other related products and services announced the new availability of size 2”&3” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.
Dr. Shaka, said, “We are pleased to offer AlGaInP layer to our [...]
2017-11-30meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer.
Silicon wafers, per SEMI Prime, P/P 4″Ø×525±25µm,
p-type Si:B[100]±0.5°, Ro=(0.001-0.005)Ohmcm,
TTV<5µm, Bow<30µm, Warp<30µm,
Both-sides-polished, SEMI Flat (one),
Sealed in Empak or equivalent cassette.
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [...]
2019-07-04meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
40mm
250
P/E
1-100
SEMI Prime, Soft cst
p-type Si:B
[100]
2″
280
P/P
1-5
SEMI Prime,
p-type Si:B
[100]
2″
280
P/P
1-5
SEMI Prime,
p-type Si:Ga
[100]
2″
350
P/P
1-5
SEMI Prime,
p-type Si:B
[100]
2″
525
P/P
1-30
SEMI,
p-type Si:B
[100]
2″
1000
P/P
1-10
SEMI Prime
p-type Si:B
[100]
2″
1000
P/E
1-10
SEMI Prime
p-type Si:B
[100]
2″
275
P/E
0.5-1.0
SEMI
p-type Si:B
[100]
2″
3150
C/C
>0.5
1Flat
p-type Si:B
[100]
2″
280
P/P
0.4-0.6
SEMI Prime,
p-type Si:B
[100]
2″
275
P/E
0.2-0.4
SEMI Prime,
p-type Si:B
[100]
2″
279
P/P
0.08-0.12
SEMI Prime
p-type Si:B
[100]
2″
300
P/E
0.016-0.017
Prime, NO Flats
p-type Si:B
[100]
2″
300
P/E
0.016-0.017
Prime, NO Flats
p-type Si:B
[100]
2″
250
P/P
0.015-0.020
SEMI Prime
p-type Si:B
[100]
2″
250
P/P
0.015-0.020
SEMI Prime
p-type Si:B
[100]
2″
250
P/P
0.015-0.020
SEMI Prime
p-type Si:B
[100]
2″
280
P/P
0.015-0.020
Prime, NO Flats
p-type Si:B
[100]
2″
280
P/P
0.015-0.020
Prime, NO Flats
p-type Si:B
[100]
2″
3000
P/E
0.015-0.020
Groups of [...]
2019-03-07meta-author