

The dependence of the morphology and crystallinity of an amorphous Ge (a-Ge) interlayer between two Si wafers on the annealing temperature is identified to understand the bubble evolution mechanism. The effect of a-Ge layer thickness on the bubble density and size at different annealing [...]
PAM-PA02 is a large size pixel detector based on CZT crystal. They have an extremely high energy resolution and space resolution with a low dose incident of radiation. 1. SPECT, γ-imaging Detector Specification Material CdZnTe Density 5.8g/cm3 Volume resistance >1010Ω.cm Dimensions 25.4×25.4mm2 Thickness 5.0mm Pixel size 1.5×1.5mm2 Pixel pitch 1.6mm Pixel array 16×16 Electrode material Au Operation temperature +30℃~+40℃ Energy range 20KeV~700MeV Energy resolution(22℃) Average<6.5%@122KeV(>13% means defective pixel) Photo-Peak Efficiency(PPE) Defined [...]
PAM XIAMEN offers Aluminum on Silicon Wafer. Aluminum Film on Silicom Wafer , 3 microns / 4″ — Al-Si-100-3um ,Si(100) N-type R:<0.005 ohm.cm Aluminum Film on Silicon Wafer , 3 microns / 4″ — Al-Si-100-3um ,Si(100) N-type R:1-10 ohm.cm Aluminum Film on Silicon Wafer, [...]
PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade. Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]
Light-emitting InGaN/GaN Heterojunction Bipolar Transistors The electrical and optical characteristics of high-gain, small-area InGaN/GaN heterojunction bipolar transistors (HBTs) grown by metal-organic chemical vapor depositionon sapphire substrate are reported. The common-emitter current-voltage characteristics of a 3×10 μm2 emitter device demonstrates a current gain β = ΔIC/ΔIB = [...]
Lawrence Livermore National Laboratory (LLNL) has installed and commissioned the highest peak power laser diode arrays in the world, representing total peak power of 3.2 megawatts (MW). To drive the diode arrays, LLNL needed to develop a completely new type of pulsed-power system, which supplies [...]