

As one of leading SiC epi wafer suppliers, PAM-XIAMEN offers SiC epi wafer, and the SiC epi wafers type includes N type and P type. The SiC epi wafer thickness from 1um to 250um can be produced, and the silicon carbide epi wafer prices [...]
PAM XIAMEN offers test grade silicon wafers Below is just a short list of the test grade silicon substrates! Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp 6 SSP Red Phos. N+ 100 47,5 ± 2,5 01T ± 0,50 0.0 ± 0.5° 0.015 – 0.035 Ohmcm 150 ± 0.5 mm 400 ± 15 µm 40 5 40 6 SSP Red Phos. N+ 100 47,5 ± 2,5 01T ± 0,50 0.0 ± 0.5° 0.015 [...]
According to the latest report from LEDinside, a division of the market research firm TrendForce, 2017-2021 LED Industry Demand and Supply Data Base- 2Q17, mainly analyzes top six LED demand and supply market trend in 2017, including IT display market, lighting market trend, automotive LED market [...]
Wide Bandgap Technology –Next Generation Power Devices The tightening of industry standards and changes in government regulations are key drivers of higher energy efficiency. For example, data centers are growing exponentially to meet demand. They use about 3% of the world’s total electricity supply (400 [...]
Figure 1: Cross-sectional diagram of the GaN-HEMT device Fujitsu today announced the development of a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for use in W-band (75-110 GHz) transmissions. This can be used in a high-capacity wireless network with coverage over a radius of several [...]
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [110] ±0.5° 2″ 279 P/E FZ >1,000 p-type Si:B [100] 2″ 300 P/E FZ 2,800-3,300 SEMI Prime, TTV<7μm p-type Si:B [100] 2″ 300 P/E FZ 2,800-3,300 SEMI Prime, TTV<7μm p-type Si:B [100] 2″ 300 P/E FZ 2,800-3,300 SEMI Prime, TTV<7μm p-type Si:B [111] ±0.5° 2″ 500 P/P FZ 5,000-6,500 SEMI Test (in unsealed cassette) p-type Si:B [111] ±0.5° 2″ 275 P/E FZ 3,000-5,000 SEMI Prime, Lifetime>2,000μs, in hard cassettes of 5 wafers p-type Si:B [111-7° towards[110]] ±0.5° 2″ 279 P/P FZ >2,000 SEMI Prime p-type Si:B [111] ±0.5° 2″ 331 P/E FZ 2,000-5,000 SEMI, Soft cst p-type Si:B [111] ±0.5° 2″ 331 P/E FZ 2,000-5,000 SEMI TEST (Scratched), Soft cst p-type Si:B [111] ±0.5° 2″ 331 P/E FZ 2,000-5,000 SEMI [...]