

PAM XIAMEN offers Single crystal KTaO3. KTaO3 (100) 5x5x0.5 mm, 2sp KTaO3, (100), 10 x 5 x 0.5mm, 1sp KTaO3, (100), 10 x 5 x 0.5mm, 2sp KTaO3, (100), 5 x 5 x 0.5mm, 1sp KTaO3, (110), 5 x 5 x 0.5mm, 1sp KTaO3, [...]
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc. And now we show one article example as follows, who bought our wafers or service: Article title:Structural modification and bandgap tunning of cubic AlN thin film by carbon ions irradiations Published by: Shakil Khan ; Ishaq Ahmad ; M. Hassan Raza ; Khizar-ul-Haq ; Ting-kai Zhao ; Fabian I. Ezema. 1.Department of Metallurgy and Materials EngineeringPakistan Institute [...]
Dependence of arsenic antisite defect concentration and two dimensional growth mode on LT GaAs growth conditions We investigated the dependence of Arsenic antisite defect concentration and that of epitaxial thickness (tepi), above which a transition to three dimensional growth appears, on the growth conditions of [...]
PAM-XIAMEN offers crucibles and coating products of PBN material including PBN Crucibles,PBN Plates,PBN Coating,PBN Heaters. These PBN (Pyrolytic Boron Nitride) products are widely used in such fields as optoelectronic,microelectronics,solar energy and powder sintering. [...]
This letter describes the heteroepitaxy of InP on Si by MOCVD. A new epitaxial structure with a thin GaAs intermediate layer (InP/GaAs/Si) is proposed to alleviate the large lattice mismatch (8.4%) between InP and Si. Using this structure, a 4-inch InP single crystal with [...]
PAM XIAMEN offers silicon wafers that we have with a (211) orientation. Item Type/Dopant Orient. Dia. Thick (μm) Surf. Res Ωcm Comment PAM3037 n-type Si:Sb [211] ±0.5° 4″ 1,500 ±15 P/P 0.01-0.02 SEMI Test, 1Flat, Empak cst, Wafers can be polished for additional fee PAM3038 n-type Si:Sb [211] ±0.5° 4″ 1600 C/C 0.01-0.02 Prime, 1Flat, Empak cst PAM3039 n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ >50 Prime, 1Flat, Empak cst PAM3040 n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime, 1Flat, Empak [...]