Evidence for Deep Acceptor Centers in Plant Photosystem I Crystals

Evidence for Deep Acceptor Centers in Plant Photosystem I Crystals

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Article title:Evidence for Deep Acceptor Centers in Plant Photosystem I Crystals

Published by:

Irina Volotsenko ; Michel Molotskii ; Anna Borovikova ; Nathan Nelson ; Yossi Rosenwaks.

Department of Physical Electronics, Faculty of Engineering, and Department of Biochemistry and Molecular Biology, Faculty of Life Sciences, Tel Aviv University, Tel Aviv 69978, Israel.

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Dry micrometer-thick crystalline photosystem I (PSI) has been shown to generate unprecedented large photovoltage under illumination. We use variable-temperature Kelvin probe force microscopy to show that deep acceptor centers are responsible for this anomalous photovoltage. We assumed that these centers are located close to the positively charged FB2+ clusters, forming a coupled center that effectively captures the photoexcited electron into a deep state. We extract the main inherent parameters of the deep centers, which are extremely important in the potential use of photosynthetic proteins in various optoelectronic devices.

Article abstract for Using Wafer from Xiamen Powerway Advanced Material Co. Ltd. (PAM-XIAMEN) or Powerway Wafer Co.,Limited

“… anomalous PV in the PSI crystals. We have used purified plant PSI crystals (Figure 1c) placed on the cleaned C-face doped SiC substrates (Xiamen Powerway Advanced Materials Co., Ltd.). Figure 2a shows the schematics …”


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