GaAsSb / InGaAs / InP heterostructure is provided by epi-structure MBE grower PAM-XIAMEN for optical sensor fabrication. The gallium arsenide antimonide (GaAsSb) lattice constant is completely matched with the lattice constant of InP substrate, so it is easy for epitaxial growth on InP substrate [...]

2022-01-18meta-author

PAM XIAMEN offers SiO2 Silica Quartz Single Crystal.
Major capability parameter
Growth method
hydro-thermal method
Crystal Structure
M6
Unit cell constant
a=4.914Å c=5.405 Å
Melt point（℃）
1610℃
Density
2.684g/cm3
Hardness
7（mohs）
Thermal conductivity
0.0033cal/cm℃
Planned constant
1200uv/℃（300℃）
Index of refraction
1.544
Thermal expansion
α11：13.71×106 / ℃ α33：7.48×106 /℃
Frequency constant
1661（kHz/mm）
Crystal orientation
Y、X or Z，30º~42.75 º ±5
Polishing
Single or double Ra<10Å
Thickness
0.5mm±0.05mm TTV<5um
Diameter
Φ2″(50.8mm)、Φ3″(76.2mm)、Φ4″(100mm)±0.2mm
main positioning：22±1.5mm (Φ3″) 32±3.0 (Φ4″)
Secondary positioning ：10mm±1.5mm
For more information, please [...]

2019-03-15meta-author

What we provide:
Item
undoped N-
Si doped N+
Semi-insulating
P+
Freestanding GaN substrate
yes
yes
yes
GaN on sapphire
yes
yes
yes
yes
InGaN on sapphire
yes
***
AlN on sapphire
yes
LED wafer
(p+GaN/MOW/N+GaN/N-AlGaN/N+GaN/N-GaN/sapphire)
Freestanding GaN substrate/GaN on sapphire/LED wafer:
For specifications of Freestanding GaN substrate/GaN on sapphire/LED wafer, please view Gallium Nitride wafer:
http://www.qualitymaterial.net/products_7.html
InGaN on Sapphire:
For specification of InGaN on sapphire template, pleas view InGaN substrate:
https://www.powerwaywafer.com/InGaN-Substrates.html
AlN on [...]

2019-09-24meta-author

Temperature dependent growth of InGaN/GaN single quantum well
InGaN/GaN single quantum well (SQW) structures under various InGaN growth temperatures have been grown by metal organic chemical vapor deposition (MOCVD), the surface morphologies and optical properties are investigated. The radius of the typical V-pits on the [...]

2014-02-26meta-author

InGaN
At present, gallium nitride (GaN) technology is no longer limited to power applications, and its advantages are also infiltrating into all corners of the RF/microwave industry, and the impact on the RF/microwave industry is growing, and should not be underestimated, because it can be [...]

2019-03-19meta-author

PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[111]
3″
300
P/P
0.3-0.4
SEMI Prime
p-type Si:B
[111]
3″
250
P/E
0.10-0.12
SEMI Prime
p-type Si:B
[111]
3″
300
P/E
0.03-0.04
SEMI Prime
p-type Si:B
[111]
3″
380
P/E
0.014-0.015
SEMI Prime
p-type Si:B
[111-1°]
3″
1000
P/E
0.014-0.016
SEMI Prime
p-type Si:B
[111]
3″
600
P/P
0.005-0.020
SEMI Prime
p-type Si:B
[111-3.5°]
3″
380
P/E
0.004-0.005
SEMI Prime
n-type Si:P
[510]
3″
1000
P/E/P
5-10
Prime, NO Flatst
n-type Si:P
[100]
3″
9500
P/E
15-22
SEMI Prime, Individual cst
n-type Si:P
[100]
3″
300
P/E
10-20
SEMI Prime
n-type Si:P
[100]
3″
380
P/E
10-20
SEMI Prime
n-type Si:P
[100]
3″
3000
P/E/P
10-12
Prime, NO Flats, Individual cst
n-type Si:P
[100]
3″
1000
P/E
6-10
Prime, NO Flatst
n-type Si:P
[100]
3″
1500
P/E
5-7
SEMI Prime
n-type Si:P
[100]
3″
300
P/P
1-20
SEMI Prime
n-type Si:P
[100]
3″
345
P/P
1-100
SEMI
n-type Si:P
[100]
3″
350
P/P
1-25
SEMI Prime, TTV<1μm, Empak cst
n-type [...]

2019-03-06meta-author