Q: For GaN on sapphire, could you please let us know which side is epi-ready?
A: Ga-face,epi-ready and N face is connecting to sapphire.
Q: For GaN on sapphire, could you please let us know which side is epi-ready?
A: Ga-face,epi-ready and N face is connecting to sapphire.
Q: For blue wafer epi on flat substrate, it would be important to omit / leave out the u-GaN layer as we want to LLO and backside conacting. Is that possible? A:Yes, it is no problem, some clients bought our wafers for LLO.
Q:The ideal waverlength for us is 465 nm, can you offer?. A:It is no problem, but you should know the wavelength should be a range, what we will offer you 465+/-2nm.
Q:Do you have the optical characterization data for this InGaN wafer? We want to know want wavelength it emits when excited optically. A PL spectrum would be perfect. Also, is the InGaN grown on any buffer layer? What is the uniformity of the Indium [...]
Q: SiC wafer reclaim, can you gurantee surface roughness<=0.3nm? A: Sure, no problem
Q:Our application will be making micro-pillar arrays based on the MQWs for high brightness LEDs and its wavelength tuning. So we do not really care the emission wavelength you provide but we will mind whether the process and emission wavelength would be consist between [...]
Q:For Si-doped GaN, what are the resistivity and mobility? A:Mobility:150-200Resistivity<0.05ohm.cm,