Q: For GaN on sapphire, could you please let us know which side is epi-ready?
A: Ga-face,epi-ready and N face is connecting to sapphire.
Leading manufacturer of compound semiconductor material in China
Q: For GaN on sapphire, could you please let us know which side is epi-ready?
A: Ga-face,epi-ready and N face is connecting to sapphire.
Q: We would like to buy LT-GaAs, could you please recommend the specs that suit for the application? A: 2″ LT-GaAs Wafer Specification: Diamater(mm)Ф 50.8mm ± 1mm Thickness 1-2um Marco Defect Density≤ 5 cm-2 Resistivity(300K) >10^8 Ohm-cm Carrier lifetime＜1ps or 15ps Dislocation Density<1×10^6cm-2 Useable Surface Area≥80% Polishing:Single side polished Substrate:GaAs substrate
Q:Our application is for microwave annealing. Therefore, the silicon carbide must be able to absorb microwaves? A:Since the dielectric constant of 6H and 4H are large, so if SiC wafer is as absorbing materials, mainly to achieve through the structure design of Electromagnetic match.I don’t [...]
Q:We want to know the refractive index of these SiC wafers? A:The refractive index is no=2.707, ne=2.755
Q:Do you sell SiC wafers that are not (0001) plane? For example, (11-20)? A:We can offer a-plane, but the size would be smaller,and should require quantity, do you have size requirement?
Q: Regarding your red LED epiwafers, what about the top layer or cap layer on the epiwafer structure? A: As before we have p+GaAs(several nanometers only) in the top layer, however these two years, due to technology innovation, and all foundry remove this layer [...]
Q:Do you offer monocrystalline SiC or polycrystalline SiC? A:We offer monocrystalline SiC currently.