PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
2″
5000
P/E
3.4-3.7
SEMI Prime, Individual cst
n-type Si:P
[100]
2″
40 ±10
P/P
1-3
SEMI Prime, TTV<5μm, in single wafer trays between clean-room sheets, MOQ 5 wafers
n-type Si:P
[100]
2″
1000
P/P
1-10
SEMI Prime
n-type Si:Sb
[100]
2″
280
P/E
0.01-0.02
SEMI Prime
n-type Si:Sb
[100]
2″
1000
P/E
0.005-0.020
SEMI Prime
n-type Si:As
[100]
2″
300
P/P
0.001-0.005
SEMI Prime
n-type Si:As
[100]
2″
500
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[100]
2″
7000
P/E
0.001-0.005
SEMI Prime, Individual cst
n-type Si:P
[111]
2″
10000
P/E
46-52
SEMI Prime, Individual cst
n-type Si:P
[111]
2″
10000
P/E
46-52
SEMI Prime, Individual [...]
2019-03-07meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
76.2
SI.
Undoped
VGF
-100
>1E7
600-650
P/E
PRIME
76.2
SI.
Undoped
VGF
-100
>1E7
610-660
P/P
EPI
76.2
N
Si
VGF
-100
600-650
P/E
PRIME
76.2
P
Zn
VGF
-100
600-650
P/E
PRIME
76.2
Undoped
CZ
-100
>30
300-350
P/P
EPI
76.2
Undoped
CZ
-100
>30
350-400
P/E
EPI
76.2
N
Sb
CZ
(100)-6
.01-.04
100-200
P/E
TEST
76.2
N
Sb
CZ
-100
.005-.02
300-350
P/P
EPI
76.2
N
Sb
CZ
-100
.005-.02
350-400
P/E
EPI
76.2
P
Ga
CZ
-100
.01-.04
300-350
P/P
EPI
76.2
P
Ga
CZ
-100
.01-.04
350-400
P/E
EPI
76.2
N
Si
VGF
-100
600-650
P/E
PRIME
76.2
P
Zn
VGF
-100
600-650
P/E
PRIME
76.2
Si
Fe
VGF
-100
5000000
600-650
P/E
PRIME
76.2
Single Wafer Shipper
ePak
Lid/Base/Spring
Holds1Wafer
Clean Room
76.2
Shipping Cassette
ePak
Holds25Wafers
Clean Room
In addition, we can offer substrate used as Alpha Spectrometer Consumables:
Silicon substrate (PAM210610 – SI)
Main technical characteristics:
Material: silicon (can be replaced with quartz).
Diameter – (74.0 ± 0.5) mm.
Thickness – (0.5 ± 0.05) mm.
Grinding [...]
2019-03-04meta-author
PAM XIAMEN offers GaP Substrtaes (110).
GaP Wafer, undoped (110) 10x10x0.45 mm, 1sp
GaP Wafer, undoped (110) 10x10x0.5 mm, 2sp
GaP Wafer, undoped (110) 5x5x0.2 mm, 2sp
GaP Wafer, undoped (110) 5x5x0.3 mm, 1sp”
GaP Wafer, undoped (110) 5x5x0.3 mm, 2sp
For more information, [...]
2019-04-22meta-author
PAM XIAMEN offers GaAs (100) undoped crystal .
GaAs, 10×5,10×10
GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10×3 x0.5 mm, 2SP
GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10×5 x0.5 mm, 2SP
GaAs (100) orientation, SI (semi-insulating), undoped 5x5x 0.5mm, 1sp,
GaAs [...]
2019-04-22meta-author
PAM XIAMEN offers Co Metallic Substrate.
Co Single Crystal Substrate (100) 10×10 x1.0 mm, 1 side polished
Co Single Crystal Substrate (111) 10×10 x 1.0 mm, 1 side polished
Co Metallic Substrate (polycrystalline): 10×10 x 1.0 mm, 1 side polished
Cr Metallic Substrate ( [...]
2019-05-08meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
4″
500
P/P
1-100
SEMI Prime, TTV<1μm, With Lasermark
n-type Si:P
[100-4°]
4″
525
P/E/P
1-10
SEMI Prime
n-type Si:P
[100]
4″
600
P/P
1-100
SEMI Prime, TTV<2μm, Bow<20μm, Warp<30μm
n-type Si:P
[100]
4″
1000
P/P
1-20
SEMI Prime
n-type Si:P
[100]
4″
2500
P/P
1-100
SEMI Prime, Individual cst
n-type Si:Sb
[100]
4″
450
P/E
~0.03
SEMI Prime
n-type Si:Sb
[100]
4″
400
P/E
~0.02
SEMI Prime
n-type Si:Sb
[100] ±0.2°
4″
250
P/P
0.01-0.05
SEMI Prime
n-type Si:Sb
[100]
4″
310 ±15
P/P
0.010-0.025
SEMI Prime, TTV<1μm
n-type Si:Sb
[100]
4″
600
P/E
0.01-0.03
Strange Flats
n-type Si:Sb
[100-4°]
4″
1500
P/E/P
0.005-0.030
SEMI Prime
n-type Si:Sb
[100]
4″
1500
P/E/P
0.001-0.030
SEMI Prime
n-type Si:P
[111]
4″
1500
P/E
>20
SEMI Prime
n-type Si:P
[111]
4″
250
P/E
18-25
SEMI Prime
n-type Si:P
[111]
4″
250
P/E
18-25
SEMI [...]
2019-03-06meta-author