PAM XIAMEN offers Zero Diffraction Si Wafer Diameter 32mm for XRD measurements
Zero Diffraction Plate 32 mm Dia. x Thickness 2.0 mm
Si Crystal for XRD sample with below specifications
Resistivity>1Ωcm
Size: 32 mm diameter x 2.0 mm thickness
Surface: double side optical polished
Zero diffraction plate is made of [...]
2020-04-23méta-auteur
PAM XIAMEN offers PMN-PT Crystals.
10 x 10 x 0.5 mm PMN-PT Piezoelectric Crystal (111) Pb(Mg1/3Nb2/3)O3-PbTiO3 SSP
10 x 10 x 0.5 mm Pyroelectric Crystal PMN-PT (111) Pb(Mg1/3Nb2/3)O3-PbTiO3 SSP
5 x 10 x 0.5 mm PMNT Electro-Optic Crystal (001) Pack SSP
5 x 10 x 0.5 mm PMNT [...]
2019-03-14méta-auteur
PAM XIAMEN offers 2″ Monocrystalline Silicon Wafer with Thermal Oxide 20nm
2inch diameter wafer made of monocrystalline silicon with isolation oxide
Diameter 50.8mm
Polishing: one-sided for microelectronics
Type of conductivity and alloying: not specified
Surface orientation: not specified
Primary and secondary flat orientation: not specified
Thickness: 675 microns±20 microns
Wedge (TTV): less than 15 microns
TTV<15μm
Distortion: less than 35 microns (the value is unchanged)
Thickness of the isolation oxide: at least 20 nm
Front side: polished
Back side: lapped-etched
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-17méta-auteur
PAM XIAMEN offers Silver Conductive Film.
Planarized Silver Nanowire Film（230mm W x 1 M L x 125 microns, 12 ohm/sq ）on Heat Stabilized PET for thin film applications – Ag-PET-12K-1
Planarized silver nanowire film on heat stabilized PET for thin film applications
Width 9in./230mm [...]
2019-04-26méta-auteur
PAM XIAMEN offers MoS2 crystal.
As a transition metal dichalcogenide, MoS2 is composed of two-dimensional layers stacked in the vertical direction. It possesses some of graphene’s desirable qualities (such as mechanical strength and electrical conductivity), and can emit light, opening possible applications such as [...]
2019-05-13méta-auteur
150mm 4H n-type SiC epi wafer with excellent uniformity and extremely low defect density is available. SiC epitaxial wafer refers to a silicon carbide wafer on which a single crystal film (epitaxial layer) with certain requirements and the same crystal as the substrate is grown on a silicon [...]
2020-03-10méta-auteur
