Plaquette Si de 2 ″ FZ avec SSP

Plaquette Si de 2 ″ FZ avec SSP

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Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire

GaN thin films were grown on ZnO/c-Al2O3 with excellent uniformity over 2 in. diameter wafers using a low temperature/pressure MOVPE process with N2 as a carrier and dimethylhydrazine as an N source. 5 mm×5 mm sections of similar GaN layers were direct-fusion-bonded onto soda lime glass substrates [...]

2013-09-11méta-auteur
(11-22) Plane N-GaN Freestanding GaN Substrate

PAM-XIAMEN offers (11-22) Plane N-GaN Freestanding GaN Substrate: Item PAM-FS-GAN(11-22)- N Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation (11-22) plane off angle toward A-axis 0 ±0.5° (11-22) plane off angle toward C-axis -1 ±0.2° Conduction Type N-type / Si Doped Resistivity (300K) < 0.05 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room   For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

2020-08-20méta-auteur
Transmitance-GaN material-TEST REPORT

Transmitance-GaN material-TEST REPORT A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact [...]

2018-08-14méta-auteur
Textured LED gives green light to Li-Fi

  V-pits on the surface of an InGaN LED (left) scatter light into the device’s active layers, known as quantum wells (QWs – right). Credit: American Chemical Society.   Standard light-emitting diodes (LEDs) used for home lighting can now transmit data more rapidly between electronic devices, thanks [...]

2017-08-24méta-auteur
3″ Silicon Wafer-1

PAM XIAMEN offers 3″ Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity  Thickness Surface Grade 76.2 N Phos CZ -100 1-20 43768 P/P PRIME 76.2 N Phos CZ -100 1-20 40-60 P/P PRIME 76.2 N Phos CZ -100 1-20 80-100 P/P PRIME 76.2 N Phos CZ -100 1-20 140-160 P/P PRIME 76.2 N Phos FZ -100 >3000 300-350 P/P PRIME 76.2 N Phos CZ -100 1-20 300-350 P/P PRIME 76.2 N Phos CZ -100 1-20 300-350 P/E PRIME 76.2 N Phos CZ -100 350-400 P/E/OX PRIME 76.2 N As CZ -100 .001-.005 350-400 P/E PRIME 76.2 N Sb CZ -100 .005-.02 350-400 P/E PRIME 76.2 N Phos FZ -100 >3000 350-400 P/E PRIME 76.2 N Phos CZ -100 1-20 350-400 P/E PRIME 76.2 N Phos CZ -100 1-20 350-400 P/E/DTOx PRIME 76.2 N Phos CZ -100 1-20 350-400 P/E/Ni PRIME 76.2 N Phos CZ -100 1-20 350-400 P/E/WTOx 76.2 N Phos CZ -100 20-50 350-400 P/P PRIME 76.2 N Phos CZ -100 20-50 350-400 P/P PRIME 76.2 N Phos CZ -100 20-50 400-450 P/E PRIME 76.2 N Phos CZ -100 450-500 P/P PRIME 76.2 N Phos CZ -100 500-550 P/E PRIME 76.2 N Phos CZ -100 950-1000 P/P PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]

2019-03-04méta-auteur
FP (Fabry-Perot) Laser Wafer

Fabry-Perot laser (FP-LD) is the most common semiconductor laser. At present, the fabrication technology of FP-LD used in optical fiber communication has been quite mature, and the structure of double heterojunction multiple quantum wells active layer, carrier and light limited structure is widely used. [...]

2023-01-13méta-auteur