PAM-XIAMEN, a epi service supplier, offers service for processing laser wafer epitaxial growth on polished GaAs substrate and epi on bare substrates for power devices. In the PAM-XIAMEN’s wafer epitaxy foundry, GaAs epitaxy wafer with quantum well laser structure can be processed with the [...]
2018-04-08meta-author
PAM XIAMEN offers WS2 Crystal.
WS2 (Tungsten Disulfide) is the first material which was found to form inorganic nanotubes, in 1992. This ability is related to the layered structure of WS2.
WS2 nanotubes have been investigated as reinforcing agents to improve the mechanical properties [...]
2019-05-20meta-author
Highlights
•N-polar InAlN thin films were grown on GaN substrates by molecular beam epitaxy.
•Surface morphology transitioned from quasi-3D to step-flow at high temperature.
•Indium saturation was observed for increasing indium flux at high temperature.
•Increased aluminum flux helped increase indium incorporation efficiency.
•N-polar InAlN films with 0.19 nm [...]
PAM XIAMEN offers LSAT Crystal Substrates.
SPECIFICATIONS:
Growth method: Czochralski method
Crystal structure: Cubic
Lattice parameter: a = 3.868 A
Melt point (℃): 1840
Density: 6.74(g/cm3)
Hardness: 6.5(mohs)
Dielectric constants: 22
Thermal expansion: 10 x 10-6 /K
Available Size: 10×3,10×5,10×10,15×15,20×15,20×20,Ф15, Ф20,Ф1″ (1 inch),Ф2″ (2 inch), Ф2.6″ (2.6 inch). Special sizes and orientations are available upon request.
Thickness: 0.5mm, 1.0mm
Polishing: Single or double, Epi-face Ra < 0.5 [...]
2019-03-13meta-author
Due to the advantages of high thermal conductivity, high breakdown field strength, high saturation electron drift rate and high bonding energy, SiC material can meet the new requirements of modern electronic technology for high temperature, high frequency, high power, high voltage and radiation resistance, [...]
2022-09-16meta-author
Enhanced Continuous-wave Trahertz emission by nano-electrodes in a photoconductive photomixer
Semiconductor materials used as PCA-based photomixers must exhibit high resistivity, high carrier mobility and ultrashort carrier lifetime. Low-temperature-grown GaAs (LT GaAs) has been shown to have such characteristics 14–18 . The samples used in our experiment had [...]