3″ Silicon Wafer-18

3″ Silicon Wafer-18

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SiO2 (single crystal quartz)-7

PAM XIAMEN offers SiO2 (single crystal quartz). Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries. Conversion from the three-index system to the four as [u ‘ v ‘ w ‘ ] —> [u v t w] is [...]

2019-05-15meta-author
1″ FZ Silicon Ingot with Diameter 25mm

PAM XIAMEN offers 1″ FZ Silicon Ingot with Diameter 25mm Silicon ingot, per SEMI, G Ø25mm FZ n-type Si:P[100]±2.0°, Ro=(1,500-7,000)Ohmcm, Ground Ingot, NO Flats, MCC Lifetime>1000µs, Oxygen<1E16/cc, Carbon<1E16/cc, Adequately packed, CofC: present. For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

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2″ Silicon Wafer-8

PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [111] 2″ 275 P/P 2.5-3.5 SEMI Prime, n-type Si:P [111] 2″ 500 P/E 2.2-3.8 SEMI Prime, n-type Si:P [111] 2″ 300 P/E 1-10 SEMI Prime, , TTV<5μm n-type Si:P [111] 2″ 500 P/E 1-10 SEMI Prime, n-type Si:P [111] ±0.5° 2″ 6000 P/E 1-10 SEMI Prime, Individual cst n-type Si:Sb [111] ±0.5° 2″ 300 P/E 0.05-0.09 SEMI Prime, n-type Si:Sb [111-3.5°] ±0.5° 2″ 300 P/E 0.05-0.09 SEMI Prime, , in hard cassettes of 5 & 8 wafers n-type Si:Sb [111] 2″ 2900 P/P 0.013-0.015 Prime, NO Flats, Individual cst n-type Si:Sb [111-2.5°] ±0.5° 2″ 280 P/E 0.012-0.017 SEMI, n-type Si:As [111] ±0.5° 2″ 279 P/E 0.001-0.005 SEMI Prime p-type [...]

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Growth of InGaN layers on (1 1 1) silicon substrates by reactive sputtering

Growth of InGaN layers on (1 1 1) silicon substrates by reactive sputtering InGaN films were grown on (1 1 1) silicon substrates by reactive magnetron sputtering. It was demonstrated that the indium composition in the InGaN films can be controlled by varying the ratio of the applied radio-frequency [...]

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ZnO on Glass/Fused silica

PAM XIAMEN offers ZnO on Glass/Fused silica. ZnO(100nm) on Fused Silca 10x10x0.5mm ZnO(150nm) Coated Sodalime Glass 1″ x1″x 0.7mm ZnO(50nm) on Fused Silca 10x10x0.5mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway [...]

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Evaluation method of threshold voltage shift of SiC MOSFETs under negative gate bias using n-type SiC MOS capacitors

A novel method for estimating threshold voltage shifts of n-channel SiC MOSFETs under negative gate bias stresses has been proposed. In the proposed method, n-type SiC MOS capacitors were utilized instead of n-channel SiC MOSFETs. The n-type SiC MOS capacitors were exposed to ultraviolet [...]

2019-11-20meta-author