PAM XIAMEN offers 3″ Silicon Wafer.
Material | Orient. | Diam. | Thck (μm) |
Surf. | Resistivity Ωcm |
Comment |
n-type Si:P | [100] | 3″ | 1800 | P/P | 1-5 | SEMI Prime, Individual cst |
n-type Si:P | [100] | 3″ | 5000 | P/E | 1-30 | Prime, NO Flats, Individual cst |
n-type Si:Sb | [100] | 3″ | 800 | P/E | 0.022-0.028 | SEMI Prime |
n-type Si:Sb | [100] | 3″ | 380 | P/E | 0.021-0.023 | SEMI Prime |
n-type Si:Sb | [100] | 3″ | 500 | P/E | 0.021-0.022 | SEMI Prime |
n-type Si:As | [100] | 3″ | 1000 | P/E | 0.001-0.005 | SEMI Prime |
n-type Si:P | [211] | 3″ | 450 | P/P | 50-65 | SEMI Prime |
n-type Si:P | [111-4°] | 3″ | 250 | P/E | 50-220 | Prime, NO Flatst |
n-type Si:P | [111] | 3″ | 10000 | P/E | 20-60 | SEMI Prime, Individual cst |
n-type Si:P | [111-3°] | 3″ | 380 | P/E | 19-25 | SEMI Prime |
n-type Si:P | [111-0.5° towards[110]] ±0.25° | 3″ | 1400 | P/E | >5 | SEMI Prime, hard cst, LaserMark |
n-type Si:P | [111] | 3″ | 6000 | P/E | 5-10 | SEMI Prime, Individual cst |
n-type Si:P | [111] | 3″ | 525 | P/E | 4.5-5.0 | SEMI Prime |
n-type Si:P | [111] | 3″ | 500 | P/P | 4-6 | Prime, NO Flatst |
n-type Si:P | [111] | 3″ | 250 | P/E | 1.0-5.5 | SEMI Prime |
n-type Si:P | [111] | 3″ | 350 | P/E | 1-10 | SEMI Prime |
n-type Si:P | [111] | 3″ | 6000 | P/E | 1-20 | SEMI Prime, Individual cst |
n-type Si:P | [111] | 3″ | 1000 | P/P | 0.5-2.0 | SEMI Prime |
n-type Si:Sb | [111] | 3″ | 300 | P/E | 0.019-0.026 | SEMI Prime |
n-type Si:Sb | [111-3°] | 3″ | 380 | P/E | 0.015-0.020 | SEMI Prime |
n-type Si:Sb | [111-4°] | 3″ | 380 | P/E | 0.015-0.017 | SEMI Prime |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.