PAM XIAMEN offers 3″ Prime Silicon Wafer Thickness 375um.
Si wafers
dia= 75mm, thickness= 375 um
orientation (100), doping Borum (B),
Double dide polishing ( epi-polished)
p-type, resistance 0,001 Ohm/cm= 25 pcs
p-type, resistance 12 Ohm/cm= 25 pcs
p-type, resistance 10 000 Ohm/cm= 25 [...]
2019-07-01meta-author
PAM XIAMEN offers Silicon wafers.
We are often asked how many silicon wafers are produced annually.
The answer depends on a more specific question including:
What Diameter
What Country or Entire World
Semiconductor or Solar industries or both
Monitor Grade, Test Grade, Prime Grade
Above are just some terms that need [...]
2019-02-26meta-author
PAM-XIAMEN offers PBN-PG composite heater with single side and double side heating patterns.
PG ribbon thickness 0.05mm
Main Heating Zones
Front surface:
Outer element R1=13.4 Ohm (hot, at 1200-1300 deg.C), cold ~ x2 higher
Inner element R2= 8.1 Ohm (hot, at 1200-1300 deg.C), cold ~ x2 higher
Auxiliary Heating Zones
Back surface:
Outer element [...]
2019-03-13meta-author
PAM XIAMEN offers 5″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
5″
635 ±15
E/E
FZ >5,000
p-type Si:B
[100]
5″
889 ±13
P/E
FZ >1,000
Prime
p-type Si:B
[100]
5″
920 ±10
E/E
FZ >1,000
p-type Si:B
[100]
5″
920 ±10
E/E
FZ >1,000
Warp measured <8μm
n-type Si:P
[100]
5″
400
P/E
FZ 7,000-14,300
SEMI Prime, Bow/Warp<20μm
n-type Si:P
[100]
5″
400
P/E
FZ 7,000-14,300
SEMI Prime, Bow/Warp<20μm
n-type Si:P
[100]
5″
350
P/E
FZ 5,000-10,000
SEMI Prime, Bow/Warp<20μm
n-type Si:P
[100]
5″
350
P/E
FZ 5,000-10,000
SEMI Prime, Bow/Warp<20μm, in Empak cassettes of 5 wafers
n-type Si:P
[111] ±0.1°
5″
200 ±15
BROKEN
FZ >3,000
Broken L/L wafers, in 2 pieces
n-type Si:P
[111]
5″
300 ±15
P/E
FZ 1,000-3,000
SEMI Prime, in [...]
2019-03-05meta-author
PAM-XIAMEN offers GaN on Si HEMT wafer for Power, D-mode. Because of the heterojunction structure of GaN and AlGaN, the GaN HEMT on Si Substrate structure has one important property of high electron mobility. The HEMT Si wafers can be for device fabrication as well as [...]
2019-05-17meta-author
PAM-XIAMEN offers C doped GaAs wafer, which is also called semi-insulating GaAs wafer. Undoped gallium arsenide wafer is applied to the field of microelectronics and mainly used to make radio frequency (RF) power devices. GaAs single crystal growth methods include VGF, VB, and LEC.
No1. C [...]
2020-04-03meta-author