PAM XIAMEN offers (112) Orientation Silicon Wafers.
If you don’t see what you need then please email us your specs.
Item
Type/Dopant
Ori
Dia (mm)
Thck (μm)
Surf.
Resistivity Ωcm
Comment
PAM3026
n-type Si:P
[112-5.0° towards[11-1]] ±0.5°
6″
875 ±10
E/E
FZ >3,000
SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips
PAM3027
n-type Si:P
[112-5° towards[11-1]] ±0.5°
6″
1,000 ±10
C/C
FZ >3,000
SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, [...]
2019-02-22meta-author
PAM XIAMEN offers 4″ CZ Prime Silicon Wafer Thickness 525 ± 25 µm.
4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm),
thickness = 525 ± 25 µm,
orientation (100)(+/-0.5°),
2-side polished,
p or n type (no matter) ,
? Ohm cm (no matter), [...]
2019-06-28meta-author
Single-emitter LD Chip 808nm @10W
PAM200914-LD-CHIP-808nm
Brand: PAM-XIAMEN
Wavelength: 808nm
Stripe width: 190um
Output Power: 10W
Cavity Length:4mm
Operation
Symbol
Min.
Typ.
Max.
Unit
Center wavelength
λ
—
808
—
nm
Output powe
P。
—
10.5
—
w
Operation mode
—
—
CW
—
—
Geometrical
Emitter width
w
—
190
—
μm
Cavity length
L
—
4000
—
μm
Chip width
W
—
500
—
μm
Chip height
H
—
150
—
μm
Electro Optical Data
Threshold curen
Ith
—
1.6
—
A
Operating current
Iop
—
10
—
A
Operating voltage
Vop
—
1.8
—
V
Slope efficiency
ηd=PJ(lop-Ith)
—
1.2
—
WIA
Total conversion efficiency
η=Po/(lopxVop)
—
58
—
%
Slow axis divergence
θn”
—
10
—
degrees
Fast axis divergence
θ1
—
35
—
degrees
Spectral width
△λ
—
3
—
nm
Polarization
—
—
TE
—
—
For more information, please contact us email [...]
2019-05-09meta-author
Weak ultraviolet light detection has important application prospects in fields such as fire warning, corona detection, and deep space detection. Avalanche photodiodes (APDs) have the advantages of high quantum efficiency, high gain, and ease of integration, making it more suitable for detecting ultraviolet light. In terms [...]
2023-11-10meta-author
We specialize in providing antimonide wafers, like InSb wafer: https://www.powerwaywafer.com/compound-semiconductor/insb-wafer.html. In addition, we will offer technology support for you. Here we share a paper “New Process Results in Smoother Indium Antimonide Substrates”, which is about modified chemomechanical polishing of InSb wafer.
Reprinted from: spie.org
Published by:
Patrick [...]
2022-07-08meta-author
LT GaAs semi-insulating layers applied in vertical-cavity surface-emitting lasers
In this paper we report on the optimization of the MBE growth process for obtaining semi-insulating LT-GaAs layers applied in vertical-cavity surface-emitting-lasers. The technological conditions for growingLT-GaAs layers have been found and test processes for growing the laser structure [...]