PAM XIAMEN offers GaAs(100) Cr-doped crystal.
GaAs , Growing Method: VGF(100) Cr- doped, SI-type, 2″ dia x 0.35mm, 2sp
GaAs single crystal wafer
Growing Method: VGF
Orientation: [...]
2019-04-22meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer Thickness 525 ± 25 µm.
PRIME WAFERS SILICIUM CZ
DIAMETER 4 inch (100mm+/-0.5mm)
ORIENTATION <1-0-0> +/-1°
THICKNESS : 525µm +/-25µm
SSP
TTV < 10µm – BOW < 40µm
FLAT : 32.5mm
TYPE P
RESISTIVITY : 8 – [...]
2019-07-04meta-author
IR images reveal that Te inclusions exist in CdZnTe crystal in the form of square, hexagonal and triangular shapes. The density of Te inclusions for sizes above 5 μm sharply varied from 2.27 × 103 cm−2 to 4.52 × 105 cm−2 with a consequent reduction in IR transmittance from ∼60.5% to ∼55% when the Te-rich volume increased [...]
PAM XIAMEN offers TiO2 Coated Sodalime Glass.
TiO2( 150nm) Coated Sodalime Glass 1″ x1″x 0.7mm
TiO2 Coated Sodalime Glass
Dimension: 1″ x1″x 0.7mm
Polish: both sides are optically clear
Nominal TiO2 film thickness: 150 nm +/- 10%
For more information, please visit our website: [...]
2019-04-29meta-author
GaN-On-Si Key Patent Analysis
The size of sapphire substrates is increasing to response to the current trend toward the low LED price, but it is actually hard to grow sapphire single crystals to a large size. For this reason, research on adopting silicon that has [...]
2012-12-19meta-author
PAM XIAMEN offers YSGG single crystal.
PAM XIAMEN is developing a series of doped GGG single crystal for nest generation Magneto-optical device.
Composition
GGG
YSGG
S-GGG(CaMgZr:GGG)
NGG
GYSGG
GSGG
(Cubic)
Gd3Ga5O12
Y3Sc2Ga3O5
Gd2.6Ca0.4Ga4.1Mg0.25Zr0.65O12
Nd3Ga5O12
Gd0.63Y2.37Sc2Ga3O12
Gd3Sc2Ga3O12
Lattice constant
12.376 Å
12.426 Å ,
12.480 Å
12.505Å
12.507 Å ,
12.554 Å ,
Diffraction(2θ)
51º7′
50º44′
50º43′
50º41′
50º40′
50º22′
Melting Point
~1800 oC
~1877℃
~1730 oC
~1550 oC
~1730 oC
~1730 oC
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [...]
2019-05-21meta-author