Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: a reflection high-energy electron diffraction study
Reflection high-energy electron diffraction (RHEED) was used for in situ monitoring of the growth behavior of GaAs at various temperatures. The growth was performed on both singular and 2° [...]
GaN template with single side polished and atomic step is available, which is grown on 4H or 6H SiC C-axis (0001) substrate. GaN growth on SiC substrate can achieve lower thermal expansion, lower lattice mismatch, and excellent thermal conductivity, thereby giving full play to [...]
2021-09-16meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[112-5° towards[11-1]] ±0.5°
4″
765
P/P
FZ ~100
SEMI Prime, TTV<3μm
n-type Si:P
[112-5° towards[11-1]] ±0.5°
4″
795
E/E
FZ >100
SEMI, in Empak, TTV<4μm, Lifetime>2,000μs
Intrinsic Si:-
[110]
4″
500
P/P
FZ >20,000
SEMI Test (Both sides with defects) @ [111] – Secondary 70.5° CCW from Primary
Intrinsic Si:-
[110] ±0.5°
4″
500
P/E
FZ >15,000
Prime
Intrinsic Si:-
[100]
4″
500
P/P
FZ >30,000
SEMI Prime, TTV<1μm
Intrinsic Si:-
[100]
4″
500
P/P
FZ >30,000
SEMI Prime, TTV<2μm, Groups of 5 wafers
Intrinsic Si:-
[100]
4″
500
P/P
FZ >30,000
SEMI Prime, TTV<5μm
Intrinsic Si:-
[100]
4″
350
P/P
FZ >20,000
Prime, TTV<5μm
Intrinsic Si:-
[100]
4″
350
P/P
FZ >20,000
Prime, [...]
2019-03-05meta-author
PAM-XIAMEN offers 650nm laser diode (LD) wafer, which emits red visible light. The epi wafer for laser diode 650nm from us is composed of the epi layers: P+ GaAs, P- AlGaInP, undoped AlGaInP, undoped GaInP QW, undoped AlGaInP and N- AlGaInP, deposited on the [...]
2019-03-13meta-author
Single crystal diamond for sale from PAM-XIAMEN is grown by chemical vapor deposition (CVD), which is a method of decomposing hydrogen and hydrocarbon gas into hydrocarbon active groups at high temperature, and depositing diamond on the substrate material under certain conditions. Theoretically, the method is [...]
2019-04-19meta-author
PAM XIAMEN offers WS2 Crystal.
WS2 (Tungsten Disulfide) is the first material which was found to form inorganic nanotubes, in 1992. This ability is related to the layered structure of WS2.
WS2 nanotubes have been investigated as reinforcing agents to improve the mechanical properties [...]
2019-05-20meta-author