PAM XIAMEN offers KBr Potassium Bromide Crystal Substrate.
To better serve you, we would like to discuss your specific requirement, Please Contact Us for a quote.
Main parameters
Crystal structure
M3
Growth method
crystallization process
Crystal lattice parameters
a=5.596Å
Density
2.75（g/cm3）
Index of refraction
1.49025
Surface roughness
< 5 [...]
2019-03-12méta-auteur
Gallium Nitride Is Non-Toxic, Biocompatible; Holds Promise for Implants, Research Finds
Gallium Nitride(GaN) is currently used in a host of technologies, from LED lighting to optic sensors, but it is not in widespread use in biomedical implants. However, the new findings from NC State and [...]
2012-06-20méta-auteur
PAM XIAMEN offers high-quality Au/Cr coated SiO2/Si substrate.
Au (highly oriented polycrystalline) /Cr coated SiO2/Si substrate , 6″x0.675 mm,1sp P-type B-doped, Au(111)=150 nm, Cr=20nm
Au (highly oriented polycrystalline) /Cr coated SiO2/Si substrate ,4″x0.525 mm,1sp P-type B-doped, Au(111)=50 nm, Cr=5 nm
Au( highly oriented polycrystalline)/Cr [...]
2019-04-16méta-auteur
Indium antimonide (InSb) thin film magnetoresistor, which is the core sensitive element of magnetoresistance (MR) sensor, is provided from PAM-XIAMEN with characteristics of non-contact measurement, small size, high reliability, high signal-to-noise ratio and wide frequency response (0-100kHz). InSb magnetoresistance is a new type of [...]
2021-09-14méta-auteur
PAM XIAMEN offers 2″ silicon wafers Thickness:1000 ±25μm.
2’’ silicon wafers
Ra < 4 nm
(100)
Thickness1000 ±25μm
Doped (no requirement for resistivity and type,
resistivity and type will be shown on test report when shipment)
2 sides polished
With flat (SEMI STD)
For [...]
2019-08-22méta-auteur
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[110]
2″
2000
P/P
1-10
1 F @ <1,-1,0>
p-type Si:B
[110]
2″
350
P/E
0.1-1.0
PF<111> SF 109.5°
p-type Si:B
[110]
2″
280
P/P
0.080-0.085
PF<111> SF 109.5°
p-type Si:B
[100]
2″
500
P/P
1,300-8,000
SEMI Prime
p-type Si:B
[100]
2″
500
P/P
1,300-2,600
SEMI Prime
p-type Si:B
[100]
2″
250
P/P
FZ 510-1,200
SEMI Prime
p-type Si:B
[100]
2″
300
P/P
~150
SEMI Prime
p-type Si:B
[100]
2″
300
P/P
90-120
SEMI Prime
p-type Si:B
[100]
2″
300
P/P
70-80
SEMI Prime
p-type Si:B
[100]
2″
1400
P/P
6-8
Prime, NO Flats
p-type Si:B
[100]
2″
1500
P/P
6-8
Prime, NO Flats
p-type Si:B
[100]
2″
3000
P/E
6-8
Prime, NO Flats, Individual cst
p-type Si:B
[100]
2″
3000
P/E
4.9-5.3
Prime, NO Flats, Individual cst
p-type Si:B
[100]
2″
300
P/E
1-10
SEMI Prime
p-type Si:Ga
[100]
2″
350
P/P
1-5
SEMI Prime
p-type Si:B
[100]
2″
500
P/E
1-2
SEMI [...]
2019-03-07méta-auteur
