50.8mm (2 Inch) Silicon Wafers-4

  • Home
  • News
  • 50.8mm (2 Inch) Silicon Wafers-4

50.8mm (2 Inch) Silicon Wafers-4

PAM XIAMEN offers 50.8mm Si wafers.
Please send us email at sales@powerwaywafer.com  if you need other specs and quantity.

Item Material Orient. Diam
(mm)		 Thck
(μm)		 Surf. Resistivity
Ωcm		 Comment
PAM2121 p-type Si:B [110] 2″ 380 P/P FZ 130–160 1 F @ <111> only
PAM2122 p-type Si:B [110] 2″ 280 P/E FZ 120–300 1 F @ <111> only
PAM2123 p-type Si:B [100] 2″ 300 P/P FZ 400–1,000 Prime, NO Flats, hard cst
PAM2124 p-type Si:B [100] 2″ 300 P/E FZ >50 SEMI Prime, 2Flats, hard cst
PAM2125 p-type Si:B [111] 2″ 300 P/E FZ 730–1,050 SEMI Prime, 1Flat, hard cst
PAM2126 p-type Si:B [111] 50mm 300 P/E FZ 500–900 SEMI Prime, 1Flat, hard cst
PAM2127 p-type Si:B [111] 2″ 300 P/P FZ >60 SEMI Prime, 2Flats, hard cst
PAM2128 p-type Si:B [111] 2″ 300 P/E FZ 36–100 SEMI Prime, 1Flat, hard cst
PAM2129 n-type Si:P [110] 2″ 250 P/E FZ ~50 PF<111> SF 134°
PAM2130 n-type Si:P [110] 2″ 900 P/E FZ 50–100 1 F @ <111> only
PAM2131 n-type Si:P [110] 2″ 280 P/P FZ 16–30 1 F @ <111> only
PAM2132 n-type Si:P [110] 2″ 1000 P/P FZ 15–18 1 F @ <1,–1,0>
PAM2133 n-type Si:P [100] 2″ 300 P/P FZ 1,000–1,600 SEMI Prime, 1Flat, hard cst
PAM2134 n-type Si:P [100] 2″ 300 P/P FZ 600–1,200 SEMI Prime, 2Flats, hard cst
PAM2135 n-type Si:P [100] 2″ 2000 P/E FZ >600 SEMI Prime, 2Flats, Individual cst
PAM2136 n-type Si:P [100] 2″ 200 P/P FZ 500–1,500 SEMI Prime, 2Flats, hard cst
PAM2137 n-type Si:P [100] 2″ 300 P/E FZ >300 SEMI Prime, 2Flats, hard cst
PAM2138 n-type Si:P [100] 2″ 500 P/P FZ >200 SEMI Prime, 2Flats, hard cst
PAM2139 n-type Si:P [100] 2″ 300 P/P FZ 50–110 SEMI Prime, 2Flats, hard cst
PAM2140 n-type Si:P [100] 2″ 280 P/P FZ 20–70 SEMI Prime, 2Flats, hard cst
PAM2141 n-type Si:P [100] 2″ 300 P/E FZ 10–40 SEMI Prime, 1Flat, hard cst
PAM2142 n-type Si:P [100] 2″ 300 P/P FZ 0.5–1.0 SEMI, 1Flat, hard cst; TWO flats at 90°
PAM2143 n-type Si:As [100] 2″ 7000 P/E FZ 0.001–0.005 SEMI Prime, 2Flats, Individual cst
PAM2144 n-type Si:P [111] 2″ 275 P/E FZ 1,500–5,000 SEMI Prime, 2Flats, hard cst
PAM2145 n-type Si:P [111] 2″ 500 P/P FZ 650–1,000 SEMI Prime, 2Flats, hard cst
PAM2146 n-type Si:P [111] 50mm 1000 P/E FZ >600 SEMI Prime, 1Flat, hard cst
PAM2147 n-type Si:P [111] 2″ 500 P/P FZ 500–3,000 SEMI Prime, 2Flats, hard cst
PAM2148 n-type Si:P [111] ±0.5° 2″ 500 P/E FZ 500–1,000 SEMI Prime, 1Flat, hard cst
PAM2149 n-type Si:P [111] 2″ 280 P/P FZ 300–400 SEMI Prime, 1Flat, hard cst
PAM2150 n-type Si:P [111] 2″ 2000 P/P FZ 168–250 Prime, NO Flats, Individual cst
PAM2151 n-type Si:P [111] 2″ 300 P/P FZ >150 SEMI Prime, 2Flats, hard cst
PAM2152 n-type Si:P [111] 2″ 500 P/P FZ 130–150 SEMI Prime, 2Flats, hard cst
PAM2153 n-type Si:P [111] 2″ 300 P/P FZ 125–210 SEMI Prime, 2Flats, hard cst
PAM2154 n-type Si:P [111] 2″ 380 P/E FZ 100–300 SEMI Prime, 2Flats, hard cst
PAM2155 n-type Si:P [111] 2″ 450 P/P FZ 100–230 Prime, NO Flats, hard cst
PAM2156 n-type Si:P [111] 2″ 300 P/P FZ 70–95 SEMI Prime, 2Flats, hard cst
PAM2157 n-type Si:P [111–1°] 2″ 300 P/E FZ 69–77 SEMI Prime, 1Flat, hard cst
PAM2158 n-type Si:P [111] 2″ 300 P/P FZ >60 SEMI Prime, 1Flat, hard cst
PAM2159 n-type Si:P [111] 2″ 300 P/E FZ 60–90 SEMI Prime, 2Flats, hard cst
PAM2160 n-type Si:P [111] 2″ 280 P/E/P FZ 40–50 SEMI Prime, 2Flats, hard cst
PAM2161 n-type Si:P [111] 2″ 300 P/P FZ 15–30 SEMI Prime, 2Flats, hard cst
PAM2162 n-type Si:P [111] 2″ 500 P/P FZ 10–55 SEMI Prime, 2Flats, hard cst
PAM2163 n-type Si:P [111] ±0.5° 2″ 300 P/E FZ NTD 7–8 SEMI, 2Flats, hard cst
PAM2164 Intrinsic Si:- [111] ±0.5° 2″ 300 P/E FZ 1,000–20,000 SEMI Prime, 2Flats, hard cst
PAM2165 p-type Si:B [110] 2″ 2000 P/P 1–10 1 F @ <1,–1,0>
PAM2166 p-type Si:B [110] 2″ 350 P/E 0.1–1.0 PF<111> SF 109.5°
PAM2167 p-type Si:B [110] 2″ 280 P/P 0.080–0.085 PF<111> SF 109.5°
PAM2168 p-type Si:B [100] 2″ 500 P/P 1,300–8,000 SEMI Prime, 2Flats, hard cst
PAM2169 p-type Si:B [100] 2″ 500 P/P 1,300–2,600 SEMI Prime, 2Flats, hard cst
PAM2170 p-type Si:B [100] 2″ 250 P/P FZ 510–1,200 SEMI Prime, 2Flats, hard cst
PAM2171 p-type Si:B [100] 2″ 300 P/P ~150 SEMI Prime, 1Flat, hard cst
PAM2172 p-type Si:B [100] 2″ 300 P/P 90–120 SEMI Prime, 2Flats, hard cst
PAM2173 p-type Si:B [100] 2″ 300 P/P 70–80 SEMI Prime, 1Flat, hard cst
PAM2174 p-type Si:B [100] 2″ 300 P/P 6–7 Prime, NO Flats, hard cst
PAM2175 p-type Si:B [100] 2″ 1400 P/P 6–8 Prime, NO Flats, hard cst
PAM2176 p-type Si:B [100] 2″ 1500 P/P 6–8 Prime, NO Flats, hard cst
PAM2177 p-type Si:B [100] 2″ 3000 P/E 6–8 Prime, NO Flats, Individual cst
PAM2178 p-type Si:B [100] 2″ 3000 P/E 4.9–5.3 Prime, NO Flats, Individual cst

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for each shipment, and each wafer are warranty.

2019-02-18

Share this post

Related Posts

3″ Silicon Wafer-4

PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [110] ±0.5° 3″ 381 P/E 0.085-0.115 SEMI Prime, Primary Flat @ [111]±0.5°, Secondary @ [111] 109.5° CW from Primary, in Epak cassettes of 6, 7 & 7 wafers p-type Si:B [110] ±0.3° 3″ 381 P/E 0.0448-0.0672 SEMI Prime, Primary @ [111], Secondary @ [111] 109.5±2° CW from Primary, hard cst p-type Si:B [110] [...]

2019-03-06meta-author
FE SRTIO3 IRON DOPED STRONTIUM TITANATE CRYSTAL SUBSTRATES FE CONCENTRATION 0.05 WT%

PAM XIAMEN offers Fe SrTiO3 Iron Doped Strontium Titanate Crystal Substrates. Single crystal SrTiO3 doped with 0.05 wt%  Fe Specifications: Crystal Structure:Cubic Growth Method:Vernuil Method Lattice Parameter:a=3.905Å Fe Doping Concentrations:0.05% Melting Point:2080C Density:5.122 g/ccm Hardness:6-6.5 Mohs Thermal expansion:10.3 x 10^-6/K Dielectric Constant:5.2 Dielectric Loss: ~5×10^-4（300K） ~3×10^-4（77K） Sizes Available:10×3m、10×5m、10×10mm、15×15mm、20×15mm can be customized upon request Typical thickness:0.5mm or 1.0mm Orientations:<100>、<110>、<111> Miscut:0.5 degree Surface Polishing:single or double [...]

2019-03-14meta-author
P-type silicon substrates

PAM XIAMEN offers P-type Silicon. Please send us emails if you need other specs and quantity. See below for a short list of our p-type silicon substrates. P-type Silicon Si 50.8mm P-type Boron Doped (100) 0.001-0.005 ohm-cm 280um SSP In stock Si 76.2mm P-type Boron Doped (100) 1-10 [...]

2019-02-13meta-author
Ceramic Substrate-4

PAM XIAMEN offers Silicon Nitride ( Si3N4) Substrate. Silicon nitride is synthesized  through several different chemical reaction methods. Parts are pressed and sintered by well developed methods to produce a ceramic sheet with a unique set of outstanding properties. The material is dark gray [...]

2019-04-18meta-author
Systematic studies of Si and Ge hemispherical concave wafers prepared by plastic deformation

Systematic studies of Si and Ge hemispherical concave wafers prepared by plastic deformation   Si and Ge hemispherical concave wafers can be prepared by plastic deformation using Si and Ge single- and polycrystal wafers. Deformation regions in which such Si and Ge hemispherical wafers can be [...]

2014-12-02meta-author , ,
100mm (4 Inch) Silicon Wafers-6

PAM XIAMEN offers 100mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2595 n–type Si:Sb [111–4°] ±0.5° 4″ 420 P/EOx 0.008–0.018 {0.0138–0.0151} SEMI Prime, 2Flats, Empak cst, Epi edges, TTV<2μm, HBSD+LTO seal PAM2596 n–type Si:Sb [111–4.0°] ±0.5° 4″ 475 ±15 P/E 0.005–0.020 {0.0113–0.0156} SEMI Prime, 2Flats, Empak cst PAM2597 n–type Si:As [111] 4″ 450 P/E 0.004–0.005 SEMI Prime, 1Flat, Empak cst PAM2598 n–type Si:As [111] [...]

2019-02-19meta-author