60 + 1 mm FZ Si Lingot -2

60 + 1 mm FZ Si Lingot -2

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4″ Silicon Wafer-6

PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 4″ 300 P/P 5-10 SEMI Test, Scratched and unsealed. Can be re-polished for extra fee p-type Si:B [100] 4″ 380 P/E 5-10 SEMI TEST (in Opened cassette), 2Flats p-type Si:B [100] 4″ 380 P/E 5-10 SEMI Prime p-type Si:B [100] 4″ 380 P/E 5-10 SEMI TEST (with bad surface) p-type Si:B [100] 4″ 380 P/E 5-10 SEMI Prime, hard cst, Back-side slightly darker than normal p-type Si:B [100] 4″ 380 P/E 5-10 SEMI Test, Dirty wafers, can be cleaned for extra fee p-type Si:B [100] 4″ 380 BROKEN 5-10 Broken P/E Wafers, [...]

2019-03-05méta-auteur
2″ FZ Intrinsic Si Wafer DSP

PAM XIAMEN offers 2″ FZ Intrinsic Si Wafer DSP 2″ FZ Intrinsic Si Wafer DSP 2″ FZ (100) intrinsic, DSP wafer Si FZ (100) dia 2’’ x 280µm intrinsic R > 20,000 ohm.cm 2 sides polished with SEMI Std flats Roughness<0.5nm For more information, [...]

2021-01-08méta-auteur
Single Crystal Germanium Wafer with Orientation (110) toward

Single crystal germanium wafer with orientation (110) miscut toward <111> with 4 deg. or 12 deg. is provided without dopant. Due to the similar chemical properties with silicon, single crystal germanium has similar applications. While hall effect germanium wafer has higher sensitivity to gamma [...]

2021-10-25méta-auteur
Diced Silicon Wafers

PAM XIAMEN offers Diced Silicon Wafers.Wafer thickness could be customized. PAM XIAMEN and our partners provide researchers with creative silicon wafer and other substrate dicing solutions. Using precision diamond saws we can cut a variety of hard brittle materials. Our Services Include. Small quantity wafer dicing at [...]

2019-02-20méta-auteur
Plaquettes épitaxiales à diode Schottky GaAs

We offer GaAs Epitaxial Wafers for Schottky Diode as follows: 1. GaAs Schottky Diode Epi Structures No.1 GaAs Schottky Diode Epiwafer Epitaxial Structure PAM210319 No. Material Composition Thickness Target(um) Thickness Tol. C/C(cm3) Target C/C     Tol. Dopant Carrrier Type 4 GaAs   1.00 ±10% ＞5.0E18 N/A Si N++ 3 GaAs   0.28 ±10% 2.0E17 ±10% Si N 2 Ga1-xAlxAs x=0.50 1 ±10% — N/A — — 1 GaAs   0.05 ±10% — N/A — — Substrate: 2”,3”,4″   No.2 4Inch GaAs Epitaxial Wafer for Schottky Diode PAM210326 -SDE No. Material Thickness Doping Doping Concentration 3 GaAs schottky contact layer – n – 2 GaAs ohmic contact layer – – 5×10^18 cm-3 1 Low temperature GaAs 2um – – 0 Semi-insulating GaAs (100) [...]

2013-10-14meta-author
AlScN Template

AlScN (Aluminum Scandium Nitride) thin film on sapphire or silicon substrate can be provided by PAM-XIAMEN for the application of SAW / FBAR filters, optoelectronic devices, power devices and MEMS. AlScN, a III-V semiconductor based ferroelectric, is a promising semiconductor material at present, which [...]

2021-09-10méta-auteur